# Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

https://mdr.nims.go.jp/datasets/ba6eeca7-4c74-462d-a14a-ccaba3d9b820

## File

- [Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf](https://mdr.nims.go.jp/filesets/9c6e439f-2855-4d10-b384-d8ebaed934ee/download) ([Detail](https://mdr.nims.go.jp/filesets/9c6e439f-2855-4d10-b384-d8ebaed934ee.md))

## Id

ba6eeca7-4c74-462d-a14a-ccaba3d9b820

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-29T06:40:53.877717Z

## Updated at

2024-12-05T03:47:52.981211Z

## Published at

2024-12-05T03:47:53.044050Z

## Doi



## First published url

https://doi.org/10.1063/5.0199961

## Date published

2024-06-14

## Recorded date published

2024-6-14

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Analysis of local strain fields around individual threading dislocations
    in GaN substrates by nanobeam x-ray diffraction
  title_type: original
  lang: en

## Description

- description: Position-dependent three-dimensional reciprocal space mapping (RSM)
    by nanobeam x-ray diffraction (nanoXRD) was performed to reveal  the strain fields
    produced around individual threading dislocations (TDs) in GaN substrates. The
    distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed
    by prerequisite analysis of multi-photon excited photoluminescence and etch pit
    methods.
  description_type: abstract
  lang: und

## Creator

- name: T. Hamachi
  role: author
  orcid: https://orcid.org/0000-0002-0631-1729
- name: T. Tohei
  role: author
  orcid: https://orcid.org/0000-0002-4113-2566
- name: Y. Hayashi
  role: author
  orcid: https://orcid.org/0000-0001-5672-1497
- name: S. Usami
  role: author
  orcid: https://orcid.org/0000-0002-9710-1718
- name: M. Imanishi
  role: author
- name: Y. Mori
  role: author
- name: K. Sumitani
  role: author
- name: Y. Imai
  role: author
  orcid: https://orcid.org/0000-0003-4686-2629
- name: S. Kimura
  role: author
  orcid: https://orcid.org/0000-0003-1064-7572
- name: A. Sakai
  role: author
  orcid: https://orcid.org/0000-0002-0654-504X

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: Dislocation
  schema: not_defined
- subject: SPring-8
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '135'
  issue: '22'

## Conference



## Related item



## Funding

- identifier: J121052565
  funder_name: Japan Science and Technology Agency
- identifier: JP16H06423
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: Murata Science and Education Foundation

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 9c6e439f-2855-4d10-b384-d8ebaed934ee
  filename: Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
  content_type: application/pdf
  size: 4099188
  md5: 50a4e8964db635685a86280bc1813902

## Thumbnail

fileset_id: 9c6e439f-2855-4d10-b384-d8ebaed934ee
filename: Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf