# Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing https://mdr.nims.go.jp/datasets/ba32fc0c-0d68-4191-8a24-9cc31ed84ad3 ## File - [2024A00849G_Revised_manuscript.pdf](https://mdr.nims.go.jp/filesets/d83f0d9c-05a2-4e8d-83ad-6a620f9271d6/download) ([Detail](https://mdr.nims.go.jp/filesets/d83f0d9c-05a2-4e8d-83ad-6a620f9271d6.md)) ## Id ba32fc0c-0d68-4191-8a24-9cc31ed84ad3 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-09-04T06:35:34.194447Z ## Updated at 2025-09-05T07:30:34.906265Z ## Published at 2025-09-05T07:19:25.234346Z ## Doi ## First published url https://doi.org/10.1038/s41565-024-01698-y ## Date published 2024-07-04 ## Recorded date published 2024-7 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing title_type: original lang: en ## Description - description: Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels. Such unique switching allows for the implementation of a convolutional neural network immune to external noise, in which the quantized Hall conductance levels of the Chern insulator device are used as weights. Our study provides a promising avenue toward development of the topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials. description_type: abstract lang: en ## Creator - name: Moyu Chen role: author - name: Yongqin Xie role: author - name: Bin Cheng role: author - name: Zaizheng Yang role: author - name: Xin-Zhi Li role: author - name: Fanqiang Chen role: author - name: Qiao Li role: author - name: Jiao Xie role: author - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Wen-Yu He role: author - name: Menghao Wu role: author - name: Shi-Jun Liang role: author - name: Feng Miao role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: Topological edge states schema: not_defined - subject: Interfacial ferroelectricity schema: not_defined - subject: Chern insulator schema: not_defined ## Rights - description: 'This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41565-024-01698-y' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2024-07-04 end_date: 2025-01-04 ## Journal - title: Nature Nanotechnology issn: '17483395' volume: '19' issue: '7' start_page: 962 end_page: 969 ## Conference ## Related item ## Funding - identifier: '62034004' funder_name: National Natural Science Foundation of China - identifier: '61921005' funder_name: National Natural Science Foundation of China - identifier: '12322407' funder_name: National Natural Science Foundation of China - identifier: '12074176' funder_name: National Natural Science Foundation of China - identifier: '62122036' funder_name: National Natural Science Foundation of China ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: d83f0d9c-05a2-4e8d-83ad-6a620f9271d6 filename: 2024A00849G_Revised_manuscript.pdf content_type: application/pdf size: 1192042 md5: 8405cc3c12776596c607fc71221e72d7 ## Thumbnail fileset_id: d83f0d9c-05a2-4e8d-83ad-6a620f9271d6 filename: 2024A00849G_Revised_manuscript.pdf