Article Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

Marisa Hocking ORCID ; Christina E. Henzinger ORCID ; Steven J. Tran ORCID ; Mihir Pendharkar ORCID ; Nathan J. Bittner ; Kenji Watanabe SAMURAI ORCID ; Takashi Taniguchi SAMURAI ORCID ; David Goldhaber-Gordon ORCID ; Andrew J. Mannix ORCID

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Marisa Hocking, Christina E. Henzinger, Steven J. Tran, Mihir Pendharkar, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon, Andrew J. Mannix. Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces. Journal of Applied Physics. 2024, 136 (2), .

Description:

(abstract)

New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170oC. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation

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Keyword: van der Waals interfaces, moiré pattern, thermal annealing

Date published: 2024-07-14

Publisher: AIP Publishing

Journal:

  • Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 2

Funding:

  • U.S. Department of Energy DE-AC02-76SF00515
  • U.S. Department of Energy DE-SC0021984
  • National Science Foundation DMR- 2018008
  • National Science Foundation ECCS-2026822
  • National Science Foundation ECCS-1542152
  • SLAC National Accelerator Laboratory Q-BALMS LDRD
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0210112

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Updated at: 2025-02-06 12:30:56 +0900

Published on MDR: 2025-02-06 12:30:56 +0900

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