# Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

https://mdr.nims.go.jp/datasets/b91e1a85-ef6d-48f8-a781-300ae0c8cd6c

## File

- [HVPE-Ga2O3(oshima)final.pdf](https://mdr.nims.go.jp/filesets/15c0e45c-a178-4042-9920-03bc9c7ccb03/download) ([Detail](https://mdr.nims.go.jp/filesets/15c0e45c-a178-4042-9920-03bc9c7ccb03.md))

## Id

b91e1a85-ef6d-48f8-a781-300ae0c8cd6c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:24:37.812867Z

## Updated at

2024-01-22T00:35:42.092185Z

## Published at

2024-01-22T03:30:11.003039Z

## Doi

https://doi.org/10.48505/nims.4351

## First published url

https://doi.org/10.1016/j.jcrysgro.2014.10.038

## Date published

2014-10-28

## Recorded date published

2015-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: c面傾斜サファイア基板を用いたb-Ga2O3のHVPE成長
  title_type: alternative
  lang: ja
- title: Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates
    by Halide Vapor Phase Epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled
    sapphire (0001) substrates by the halide vapor epitaxy. (-201) oriented b-Ga2O3
    layers were successfully grown using GaCl and O2 as source gases. The growth rate
    monotonically increased with increasing the partial pressures of the source gases,
    reaching over 250 um/h. By the use of off-angled substrates and thick layer overgrowth,
    almost single-oriented heteroepitaxial growth was achieved.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Encarnaciόn G. Vίllora
  role: author
  orcid: https://orcid.org/0000-0001-8868-0028
- name: Kiyoshi Shimamura
  role: author
  orcid: https://orcid.org/0000-0001-6502-8731

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: β-Ga2O3
  schema: not_defined
- subject: heteroepitaxy
  schema: not_defined

## Rights

- description: "© 2014. This manuscript version is made available under the CC-BY-NC-ND
    4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF CRYSTAL GROWTH
  issn: '00220248'
  volume: '410'
  start_page: 53
  end_page: 58

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 15c0e45c-a178-4042-9920-03bc9c7ccb03
  filename: HVPE-Ga2O3(oshima)final.pdf
  content_type: application/pdf
  size: 654416
  md5: f97d56382f1b8df2b7d96547e9890b6b

## Thumbnail

fileset_id: 15c0e45c-a178-4042-9920-03bc9c7ccb03
filename: HVPE-Ga2O3(oshima)final.pdf