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説明:

Recently, layered materials have become an interesting platform for quantum optics and nanophotonics. Among them, hexagonal boron nitride (hBN) has attracted a widespread interest due to its peculiar defect-related luminescence properties. In particular, the possible generation and tailoring of color centers by particle irradiation are becoming pivotal aspects for next generation quantum optics and photonics. In this work, we use in-situ cathodoluminescence hyperspectral analysis to investigate the effect of fast-scanning, low-voltage electron irradiation on deep level emissions in the UV range. The quenching of the UV band and changes in the width of the near-band-edge UV luminescence of hBN are investigated as a function of the irradiation time. This quenching is assigned to the electron beam dissociation of in-plane carbon dimer, responsible for such emission, with a concurrent carbon atoms reconfiguration in non-radiative complexes involving vacancies or interstitials, as demonstrated by the intensity decrease of below bandgap photoluminescence emissions. Raman spectroscopy reveals an important deposition of amorphous carbon on top of the hBN flake.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: hexagonal boron nitride (hBN)
, electron irradiation, cathodoluminescence

刊行年月日: 2025-04-01

出版者: IOP Publishing

掲載誌:

• 2D Materials (ISSN: 20531583) vol. 12 issue. 2 025026

研究助成金:

• Agency for Cultural Affairs, Government of Japan
• Core Research for Evolutional Science and Technology JPMJCR24A5
• Japan Science and Technology Corporation
• Japan Society for the Promotion of Science 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/adc119

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更新時刻: 2026-05-25 09:06:19 +0900

MDRでの公開時刻: 2026-05-25 10:29:21 +0900