# Anisotropic Resonant Tunneling in Twist-Stacked van der Waals Heterostructure

https://mdr.nims.go.jp/datasets/b786beed-21e5-4fca-88cf-a49ca6746ca3

## File

- [2025A00466G_manuscript-final.pdf](https://mdr.nims.go.jp/filesets/8886ccc3-2a82-42e3-9974-cd71fdaae3d4/download) ([Detail](https://mdr.nims.go.jp/filesets/8886ccc3-2a82-42e3-9974-cd71fdaae3d4.md))

## Id

b786beed-21e5-4fca-88cf-a49ca6746ca3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-02T01:00:54.356984Z

## Updated at

2026-07-06T00:34:44.179399Z

## Published at

2026-07-06T03:30:05.987779Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c13215

## Date published

2025-03-18

## Recorded date published

2025-3-18

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Anisotropic Resonant Tunneling in Twist-Stacked van der Waals Heterostructure
  title_type: original
  lang: en

## Description

- description: Resonant tunneling, with energy and momentum conservation, has been
    extensively studied in two-dimensional van der Waals heterostructures and has
    potential applications in band structure probing, multivalued logic, and oscillators.
    Lattice alignment is crucial in resonant tunneling transistors (RTTs) for achieving
    negative differential resistance (NDR) with a high peak-to-valley ratio (PVR)
    because twist-angle-induced momentum mismatch can break the resonant tunneling
    condition. Here, we report anisotropic resonant tunneling in twist-stacked ReSe2/h-BN/ReSe2
    RTTs, where the PVR exhibits a strong dependence on the twist angle between the
    two ReSe2 layers, reaching a maximum at the twist angle of 102°. Theoretical calculations
    suggest that the twist angle modulates the joint density of states of the two
    anisotropic bands in ReSe2 layers during the tunneling process, significantly
    suppressing the valley current and thereby enhancing the PVR. Double NDR peaks
    were observed in twist-stacked RTTs, which are attributed to interband resonant
    tunneling. Moreover, our twist-stacked RTTs are utilized in multibit inverters
    and adjustable self-powered photodetectors, providing potentials for the design
    of high-performance RTTs and photodetectors via twist-stacked engineering.
  description_type: abstract
  lang: en

## Creator

- name: Dan Guo
  role: author
- name: Huiwen Wang
  role: author
- name: Liu Yang
  role: author
- name: Weikang Dong
  role: author
- name: Boyu Xu
  role: author
- name: Shuang Du
  role: author
- name: Xuyan Rui
  role: author
- name: Qingrong Liang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Zhiwei Wang
  role: author
- name: Yan Xiong
  role: author
- name: Wei Jiang
  role: author
- name: Jiadong Zhou
  role: author
- name: Shoujun Zheng
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Resonant tunneling transistor (RTT)
  schema: not_defined
- subject: Negative differential resistance (NDR)
  schema: not_defined
- subject: van der Waals heterostructure
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society.
    To access the final published article, see https://doi.org/10.1021/acsnano.4c13215.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-03-10
end_date: 2026-03-10

## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '10'
  start_page: 9826
  end_page: 9834

## Conference



## Related item



## Funding

- identifier: 2022YFA1203900
  funder_name: National Key Research and Development Program of China
- identifier: '12104050'
  funder_name: National Natural Science Foundation of China
- identifier: '62375018'
  funder_name: National Natural Science Foundation of China
- funder_name: Beijing Institute of Technology Research Fund Program for Young Scholars

## Instrument



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## Fileset

- id: 8886ccc3-2a82-42e3-9974-cd71fdaae3d4
  filename: 2025A00466G_manuscript-final.pdf
  content_type: application/pdf
  size: 2130745
  md5: 57116aa3ef1f84e3af522d9c7f105193

## Thumbnail

fileset_id: 8886ccc3-2a82-42e3-9974-cd71fdaae3d4
filename: 2025A00466G_manuscript-final.pdf