ジャーナル論文 Tailoring Phonon Polaritons in hBN with the Plasmonic Phase-Change Material In 3 SbTe 2
Lina Jäckering (author) (この著者で検索)
;
Aaron Moos (author) (この著者で検索)
;
Lukas Conrads (author) (この著者で検索)
;
Yiheng Li (author) (この著者で検索)
;
Alexander Rothstein (author) (この著者で検索)
;
Dominique Malik (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Matthias Wuttig (author) (この著者で検索)
;
Christoph Stampfer (author) (この著者で検索)
;
Thomas Taubner (author) (この著者で検索)
コレクション

引用
Lina Jäckering, Aaron Moos, Lukas Conrads, Yiheng Li, Alexander Rothstein, Dominique Malik, Kenji Watanabe, Takashi Taniguchi, Matthias Wuttig, Christoph Stampfer, Thomas Taubner. Tailoring Phonon Polaritons in hBN with the Plasmonic Phase-Change Material In 3 SbTe 2. Nano Letters. 2025, 25 (44), 15809-15816. https://doi.org/10.1021/acs.nanolett.5c03325

説明:

(abstract)

Polaritons in van-der-Waals materials (vdWMs) promise high confinement and multiple tailoring options by resonators and launching structures which conventionally require cumbersome lithography techniques. Optical programming of phase-change materials (PCMs) offers fast and reconfigurable fabrication of these structures. As the plasmonic PCM In3SbTe2 can be switched between a dielectric and metallic phase, In3SbTe2 is promising for optical programming of metallic launching structures to tailor and confine polaritons in vdWMs. Here, we combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN’s phonon polaritons into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the confinement up to λ/39 and achieve a quality factor of 72. Finally, we fabricate a focusing structure for hBN’s polaritons whose focal point we reconfigure. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWMs.

権利情報:

キーワード: Phonon polaritons, Hexagonal boron nitride (hBN), Phase-change materials (PCM)

刊行年月日: 2025-11-05

出版者: American Chemical Society (ACS)

掲載誌:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 44 p. 15809-15816

研究助成金:

  • Ministry of Education, Culture, Sports, Science and Technology
  • RWTH Aachen University
  • Deutsche Forschungsgemeinschaft 471733165
  • Deutsche Forschungsgemeinschaft EXC 2004/1-390534769
  • Deutsche Forschungsgemeinschaft SFB 917 - 518913417
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 23H02052
  • Horizon 2020 Framework Programme 881603

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.5c03325

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-06-25 14:05:17 +0900

MDRでの公開時刻: 2026-10-23 03:00:00 +0900

ファイル名 サイズ
ファイル名 2025A01546G_Manuscript_Tailoring hBNs PhP with the Plasmonic PCM In3SbTe2.pdf
application/pdf
サイズ 779KB 詳細
ファイル名 2025A01546G_Supplementary Information_Tailoring hBNs PhP with the Plasmonic PCM In3SbTe2.pdf (サムネイル)
application/pdf
サイズ 1.09MB 詳細