# Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

https://mdr.nims.go.jp/datasets/b6ca8e74-7710-48c7-9ddf-d6c0c08c9569

## Files

- [Shi_ACSnano2024.pdf](https://mdr.nims.go.jp/filesets/e7df79c1-9824-4d46-a58b-999357b7806e/download) ([Detail](https://mdr.nims.go.jp/filesets/e7df79c1-9824-4d46-a58b-999357b7806e.md))

## Id

b6ca8e74-7710-48c7-9ddf-d6c0c08c9569

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-04-08T04:22:29.195678Z

## Updated at

2024-04-08T07:30:22.066481Z

## Published at

2024-04-08T07:30:22.613668Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c02101

## Date published

2024-04-02

## Recorded date published

2024-4-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Approach to Low Contact Resistance Formation on Buried Interface in Oxide
    Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway'
  title_type: original
  lang: en

## Description

- description: Amorphous oxide semiconductors (AOSs) with low off-currents and processing
    temperatures offer promising alternative materials for next-generation high-density
    memory devices. In this work, we report the pioneering use of palladium thin film
    as a high-efficiency active hydrogen transfer pathway from the outside to the
    internal contact interface via low-temperature post-annealing in the H2 atmosphere,
    and the formation of highly conductive metallic interlayer effectively solves
    the contact issues at the deep internal in devices. The application of this method
    reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc
    oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of
    thin-film transistor was increased from 3.2 cm2 V–1 s–1 to nearly 20 cm2 V–1 s–1,
    preserving an excellent bias stress stability. This technology has wide applicability
    for the solution of contact resistance issues in oxide semiconductor devices with
    complex architectures.
  description_type: abstract
  lang: und

## Creator

- name: Yuhao Shi
  role: author
  orcid: https://orcid.org/0000-0002-7956-193X
- name: Masatake Tsuji
  role: author
  orcid: https://orcid.org/0000-0002-3404-6037
- name: Hanjun Cho
  role: author
  orcid: https://orcid.org/0009-0009-2834-8846
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
  organization: National Institute for Materials Science
- name: Junghwan Kim
  role: author
  orcid: https://orcid.org/0000-0001-9168-6260
- name: Hideo Hosono
  role: author
  orcid: https://orcid.org/0000-0001-9260-6728
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: oxide semiconductors
  schema: not_defined
- subject: IGZO
  schema: not_defined
- subject: thin-film transistors
  schema: not_defined
- subject: contact resistance
  schema: not_defined
- subject: palladium
  schema: not_defined
- subject: hydrogen
  schema: not_defined

## Rights

- description: "Share — copy and redistribute the material in any medium or format
    for any purpose, even commercially.\r\nAdapt — remix, transform, and build upon
    the material for any purpose, even commercially."
  identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Nano
  issn: '19360851'
  volume: '18'
  issue: '13'
  start_page: 9736
  end_page: 9745

## Conference



## Related item



## Funding

- funder_name: Samsung Electronics Co, Ltd.
- identifier: JPMXP1122683430
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: e7df79c1-9824-4d46-a58b-999357b7806e
  filename: Shi_ACSnano2024.pdf
  content_type: application/pdf
  size: 6007561
  md5: f188b5f25ba32ce3f73344b9ccc0ace2

## Thumbnail

fileset_id: e7df79c1-9824-4d46-a58b-999357b7806e
filename: Shi_ACSnano2024.pdf