# Fabrication of air bridges on (100)                        β-Ga2O3 using crystallographic HCl gas                    etching

https://mdr.nims.go.jp/datasets/b62faa36-e94f-471d-b172-1cf22e4abf4e

## File

- [055207_1_5.0260753-2-8.pdf](https://mdr.nims.go.jp/filesets/8dc1d1b4-a439-4bfd-afe2-9184d50e6225/download) ([Detail](https://mdr.nims.go.jp/filesets/8dc1d1b4-a439-4bfd-afe2-9184d50e6225.md))

## Id

b62faa36-e94f-471d-b172-1cf22e4abf4e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-05-07T00:25:00.091991Z

## Updated at

2025-05-07T03:30:22.806415Z

## Published at

2025-05-07T03:19:27.257127Z

## Doi



## First published url

https://doi.org/10.1063/5.0260753

## Date published

2025-05-01

## Recorded date published

2025-5-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Fabrication of air bridges on (100)
                            β-Ga2O3 using crystallographic HCl gas
                        etching
  title_type: original
  lang: en

## Description

- description: β-Ga2O3 air bridges on (100) substrates were fabricated through a self-aligning
    process that used conventional anisotropic BCl3/Ar-plasma etching and crystallographic
    plasma-free HCl gas etching. The former etching can be done as vertical etching
    to expose the etched sidewalls, whereas the latter etching enables horizontal
    etching that is aligned with the (100) plane owing to the high etch resistance
    due to the lowest surface energy density of the (100) plane. By combining the
    two orthogonal etching techniques with other standard device fabrication processes,
    we were able to create air bridges. We believe that the undercut etching method
    demonstrated herein will facilitate the fabrication of micro-electromechanical
    systems.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: HCl gas etching
  schema: not_defined
- subject: air bridge
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin



## Embargo



## Journal

- title: AIP Advances
  issn: '21583226'
  volume: '15'
  issue: '5'

## Conference



## Related item



## Funding

- funder_name: TEPCO Memorial Foundation
- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



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## Specimen



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## Fileset

- id: 8dc1d1b4-a439-4bfd-afe2-9184d50e6225
  filename: 055207_1_5.0260753-2-8.pdf
  content_type: application/pdf
  size: 12070297
  md5: eadfac01e84b6cc4d21ec0406fd4a6c8

## Thumbnail

fileset_id: 8dc1d1b4-a439-4bfd-afe2-9184d50e6225
filename: 055207_1_5.0260753-2-8.pdf