Article Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States

Illia Serhiienko SAMURAI ORCID (National Institute for Materials Science) ; Andrei Novitskii (National Institute for Materials Science) ; Fabian Garmroudi ; Evgeny Kolesnikov ; Evgenia Chernyshova ; Tatyana Sviridova ; Aleksei Bogach ; Andrei Voronin ; Hieu Duy Nguyen ; Naoyuki Kawamoto SAMURAI ORCID (National Institute for Materials Science) ; Ernst Bauer ; Vladimir Khovaylo ; Takao Mori SAMURAI ORCID (National Institute for Materials Science)

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Illia Serhiienko, Andrei Novitskii, Fabian Garmroudi, Evgeny Kolesnikov, Evgenia Chernyshova, Tatyana Sviridova, Aleksei Bogach, Andrei Voronin, Hieu Duy Nguyen, Naoyuki Kawamoto, Ernst Bauer, Vladimir Khovaylo, Takao Mori. Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States. Advanced Science. 2024, 11 (26), 2309291.
SAMURAI

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(abstract)

Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics (PFmax = 21.5 µWcm−1K−2 and zTmax = 0.5 at 1100 K in Zn0.96Al0.04O) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

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Keyword: thermoelectric

Date published: 2024-05-05

Publisher: Wiley

Journal:

  • Advanced Science (ISSN: 21983844) vol. 11 issue. 26 2309291

Funding:

  • Russian Science Foundation 19‐79‐10282
  • JST-Mirai Program JPMJMI19A1
  • Japan Science and Technology Agency JPMJSP2124
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5114

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1002/advs.202309291

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Updated at: 2024-10-08 16:30:17 +0900

Published on MDR: 2024-10-08 16:30:17 +0900

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