Illia Serhiienko
(National Institute for Materials Science)
;
Andrei Novitskii
(National Institute for Materials Science)
;
Fabian Garmroudi
;
Evgeny Kolesnikov
;
Evgenia Chernyshova
;
Tatyana Sviridova
;
Aleksei Bogach
;
Andrei Voronin
;
Hieu Duy Nguyen
;
Naoyuki Kawamoto
(National Institute for Materials Science)
;
Ernst Bauer
;
Vladimir Khovaylo
;
Takao Mori
(National Institute for Materials Science)
説明:
(abstract)Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics (PFmax = 21.5 µWcm−1K−2 and zTmax = 0.5 at 1100 K in Zn0.96Al0.04O) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.
権利情報:
キーワード: thermoelectric
刊行年月日: 2024-05-05
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1002/advs.202309291
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-10-08 16:30:17 +0900
MDRでの公開時刻: 2024-10-08 16:30:17 +0900
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Advanced Science - 2024 - Serhiienko - Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of--smallersize.pdf
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サイズ | 159MB | 詳細 |