# Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam

https://mdr.nims.go.jp/datasets/b2c91d89-2d81-47f6-a652-ae8e69c74127

## File

- [JJAP_Horikawa_main text_R4_rev2.pdf](https://mdr.nims.go.jp/filesets/fe1808ef-547b-4dd4-9c74-4c88418a433d/download) ([Detail](https://mdr.nims.go.jp/filesets/fe1808ef-547b-4dd4-9c74-4c88418a433d.md))

## Id

b2c91d89-2d81-47f6-a652-ae8e69c74127

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-22T05:17:37.479780Z

## Updated at

2026-02-14T12:58:00.969949Z

## Published at

2026-04-07T23:23:37.968634Z

## Doi

https://doi.org/10.48505/nims.5661

## First published url

https://doi.org/10.35848/1347-4065/adc0d3

## Date published

2025-04-01

## Recorded date published

2025-4-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using
    parallel X-ray beam
  title_type: original
  lang: en

## Description

- description: X-ray diffuse scattering (XDS) is a powerful technique for studying
    the formation of bulk defects that cause lattice distortions in Czochralski silicon
    (CZ-Si). To quantitatively analyze oxygen precipitates (OP) in CZ-Si that are
    below the detection limit of infrared tomography (IR-T), we investigated the relationship
    between the XDS intensity and the IR-T analysis results obtained from various
    samples. X-ray rocking curve (XRC) profiles, which included XDS near 400 diffraction
    peaks on the obliquely polished surface of the CZ-Si wafers, were obtained using
    a synchrotron radiation X-ray diffractometer. By deriving the XDS-integrated intensities
    from these XRC profiles, we identified a significant and quantitative relation
    between the XDS characteristic intensity and the volume density and size of the
    OPs measured by IR-T. We also find that X-rays scattered from depths below 40
    μm contribute to the characteristic intensity of XDS. These results provide critical
    information for quantitative analysis of OPs using XDS.
  description_type: abstract
  lang: und

## Creator

- name: Tomoyuki Horikawa
  role: author
- name: Yoshiyuki Tsusaka
  role: author
- name: Junji Matsui
  role: author
- name: Tetsuya Tohei
  role: author
- name: Yusuke Hayashi
  role: author
  orcid: https://orcid.org/0000-0001-5672-1497
  organization: National Institute for Materials Science
- name: Akira Sakai
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

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## Keyword

- subject: Silicon
  schema: not_defined
- subject: X-ray diffuse scattering
  schema: not_defined

## Rights

- description: " This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/adc0d3."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-04-08
end_date: 2026-04-09

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '4'
  article_number: '045502'

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## Fileset

- id: fe1808ef-547b-4dd4-9c74-4c88418a433d
  filename: JJAP_Horikawa_main text_R4_rev2.pdf
  content_type: application/pdf
  size: 1185208
  md5: 5b67b8e070ea64cdc5a55307bbae3c88

## Thumbnail

fileset_id: fe1808ef-547b-4dd4-9c74-4c88418a433d
filename: JJAP_Horikawa_main text_R4_rev2.pdf