# Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1−                    <i>x</i>                    Zr                    <i>x</i>                    O2 thin films

https://mdr.nims.go.jp/datasets/b195cdb6-016a-406e-aa45-4a8c01a6aea1

## File

- [H. Che et al., J. Vac. Sci. Technol. A 44, 030402 (2026).pdf](https://mdr.nims.go.jp/filesets/6b11edaa-300b-4c28-b794-773e96bd06c5/download) ([Detail](https://mdr.nims.go.jp/filesets/6b11edaa-300b-4c28-b794-773e96bd06c5.md))

## Id

b195cdb6-016a-406e-aa45-4a8c01a6aea1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-17T07:53:14.737160Z

## Updated at

2026-07-14T01:27:45.700312Z

## Published at

2026-07-14T07:46:30.654745Z

## Doi

https://doi.org/10.48505/nims.6404

## First published url

https://doi.org/10.1116/6.0005362

## Date published

2026-05-01

## Recorded date published

2026-5-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effects of oxidant selection for atomic layer deposition on impurity removal
    and crystallinity of as-grown Hf1−                    <i>x</i>                    Zr                    <i>x</i>                    O2
    thin films
  title_type: original
  lang: en

## Description

- description: '10-nm-thick Hf1-xZrxO2 (HZO) films were deposited on TiN by atomic
    layer deposition (ALD) at 250 °C using H2O2 or H2O as an oxidant with various
    exposure time. X-ray diffraction  results showed that all as-grown films exhibited
    an overlapping peak associated with the orthorhombic (O)/tetragonal (T)/cubic
    (C) phases, while showing no significant peaks of the monoclinic phase. With extending
    oxidant exposure time, both H2O2- and H2O-based films exhibited enhanced O/T/C
    phases peak area and reached saturation under sufficient oxidation. In the saturated
    region, the O/T/C phases peak area of H2O2-based films was ~30% higher than that
    of H2O-based films. Carbon and nitrogen impurities were considered to remain in
    the films as residual precursor-ligand fragments due to incomplete reaction. With
    evaluation of impurity levels, both H2O2- and H2O-based HZO films exhibited a
    trend that crystallinity increases as impurity concentration of carbon and nitrogen
    decreases. Moreover, H2O2-based films had carbon and nitrogen concentrations approximately
    one order of magnitude lower than those of H2O-based films. These results suggest
    that impurity removal during the oxidation step is a critical factor for enhancing
    the crystallization of as-grown HZO films. '
  description_type: abstract
  lang: und

## Creator

- name: Haoming Che
  role: author
- name: Takashi Onaya
  role: author
  orcid: https://orcid.org/0000-0002-2710-8623
  organization: National Institute for Materials Science
- name: Atsushi Tamura
  role: author
- name: Masaki Ishii
  role: author
- name: Hiroshi Taka
  role: author
- name: Koji Kita
  role: author

## Contact agent



## Publisher

organization: American Vacuum Society

## Managing organization



## Keyword

- subject: atomic layer deposition
  schema: not_defined
- subject: ferroelectric HfO2-based thin films
  schema: not_defined
- subject: oxidant
  schema: not_defined
- subject: low temperature fabrication process
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Haoming Che, Takashi Onaya, Atsushi Tamura, Masaki Ishii, Hiroshi Taka, Koji
    Kita; Effects of oxidant selection for atomic layer deposition on impurity removal
    and crystallinity of as-grown Hf1−xZrxO2 thin films. J. Vac. Sci. Technol. A 1
    May 2026; 44 (3): 030402. and may be found at https://doi.org/10.1116/6.0005362.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Vacuum Science & Technology A
  issn: '07342101'
  volume: '44'
  issue: '3'
  article_number: '030402'

## Conference



## Related item



## Funding

- identifier: JP24K17304
  funder_name: JSPS KAKENHI
- identifier: JP24K21616
  funder_name: JSPS KAKENHI
- identifier: JPMXS0320220213
  funder_name: MEXT Leading Initiative for Excellent Young Researchers

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 6b11edaa-300b-4c28-b794-773e96bd06c5
  filename: H. Che et al., J. Vac. Sci. Technol. A 44, 030402 (2026).pdf
  content_type: application/pdf
  size: 860712
  md5: 49fbdb065cece6916693653dd51356c7

## Thumbnail

fileset_id: 6b11edaa-300b-4c28-b794-773e96bd06c5
filename: H. Che et al., J. Vac. Sci. Technol. A 44, 030402 (2026).pdf