# Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation https://mdr.nims.go.jp/datasets/b1818633-0c8c-4aec-b2e6-6256c2a206c8 ## File - [Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf](https://mdr.nims.go.jp/filesets/9a9f205c-974b-4079-a1b2-0b40b3981504/download) ([Detail](https://mdr.nims.go.jp/filesets/9a9f205c-974b-4079-a1b2-0b40b3981504.md)) ## Id b1818633-0c8c-4aec-b2e6-6256c2a206c8 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-05-07T08:17:42.141400Z ## Updated at 2025-03-01T03:30:45.969132Z ## Published at 2025-03-01T03:30:46.077225Z ## Doi https://doi.org/10.48505/nims.4498 ## First published url https://doi.org/10.1002/pssb.202400060 ## Date published 2024-02-29 ## Recorded date published 2024-5 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation title_type: original lang: en ## Description - description: Annealing behaviors of vacancy-type defects in ion-implanted GaN were studied by positron annihilation. Mg+ and N+ ions were implanted to obtain 700-nm-deep box profiles with Mg and N concentrations of 1 x 1018 cm-3, and the samples were annealed using an ultra-high pressure annealing system. For as-implanted samples, the major defect species was identified as Ga-vacancy (VGa)-type defects. For N-implanted GaN, the size of the vacancy-type defects increased as the annealing temperature increased up to 1100°C and then started to shrink above 1200°C. This annealing behavior was attributed to recombinations between N-vacancy (VN)-type defects and excess N atoms. For Mg-implanted GaN, the major defect species after annealing above 1000°C was vacancy clusters such as (VGaVN)3. Some of them acted as nonradiative recombination centers for blue and ultraviolet luminescence at room temperature. Their energy levels corresponding to the transition from positive to neutral were located between 2.6 eV above the valence band maximum and the conduction band minimum. The thermal activation process of electron detrapping from the vacancy clusters was also studied. For Mg-implanted GaN, one of the major secondary defects was collapsed vacancy disks forming intrinsic dislocation loops. They were eliminated by additional N-implantation, which was associated with vacancy agglomerations under the annealing in VGa-rich condition. description_type: abstract lang: und ## Creator - name: Akira Uedono role: author orcid: https://orcid.org/0000-0001-6224-4869 - name: Ryo Tanaka role: author orcid: https://orcid.org/0000-0002-4058-7649 - name: Shinya Takashima role: author orcid: https://orcid.org/0000-0002-3212-4521 - name: Katsunori Ueno role: author - name: Masaharu Edo role: author - name: Kohei Shima role: author orcid: https://orcid.org/0000-0003-0967-141X - name: Shigefusa F. Chichibu role: author orcid: https://orcid.org/0000-0001-9558-1642 - name: Jun Uzuhashi role: author orcid: https://orcid.org/0000-0003-2023-8158 - name: Tadakatsu Ohkubo role: author orcid: https://orcid.org/0000-0003-3548-1951 - name: Shoji Ishibashi role: author orcid: https://orcid.org/0000-0002-4896-3530 - name: Kacper Sierakowski role: author orcid: https://orcid.org/0000-0002-9447-1182 - name: Michal Bockowski role: author orcid: https://orcid.org/0000-0003-1616-685X ## Contact agent ## Publisher organization: Wiley ## Managing organization ## Keyword - subject: gallium nitride schema: not_defined ## Rights - description: 'This is the peer reviewed version of the following article: Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation, which has been published in final form at https://doi.org/10.1002/pssb.202400060. 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' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2024-02-29 end_date: 2025-03-01 ## Journal - title: physica status solidi (b) issn: '03701972' volume: '261' issue: '5' article_number: '2400060' ## Conference ## Related item ## Funding - identifier: JPJ005357 funder_name: New Energy and Industrial Technology Development Organization - identifier: JPJ009777 funder_name: Ministry of Education, Culture, Sports, Science and Technology ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 9a9f205c-974b-4079-a1b2-0b40b3981504 filename: Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf content_type: application/pdf size: 909095 md5: '0048bcb2c84a95d6aef807f154269ece' ## Thumbnail fileset_id: 9a9f205c-974b-4079-a1b2-0b40b3981504 filename: Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf