# Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

https://mdr.nims.go.jp/datasets/b114a103-8971-41c9-bc64-2d18b162ca42

## File

- [AcceptedManuscript_Sasama_2024_APL24-AR-05220.pdf](https://mdr.nims.go.jp/filesets/eeeff644-bdf3-4354-afe7-3bfd03b1049c/download) ([Detail](https://mdr.nims.go.jp/filesets/eeeff644-bdf3-4354-afe7-3bfd03b1049c.md))

## Id

b114a103-8971-41c9-bc64-2d18b162ca42

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-11T12:46:21.337106Z

## Updated at

2024-09-12T07:30:45.274963Z

## Published at

2024-09-12T07:30:45.366199Z

## Doi

https://doi.org/10.48505/nims.4743

## First published url

https://doi.org/10.1063/5.0224192

## Date published

2024-08-26

## Recorded date published

2024-8-26

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Self-aligned gate electrode for hydrogen-terminated diamond field-effect
    transistors with a hexagonal boron nitride gate insulator
  title_type: original
  lang: en

## Description

- description: Diamond electronic devices have garnered significant interest owing
    to their excellent semiconducting properties. We recently demonstrated that excluding
    surface-transfer doping results in enhanced carrier mobility and a normally off
    behavior in diamond field-effect transistors (FETs) with a hexagonal boron nitride
    (h-BN) gate insulator. In our previous study, the gate electrode was overlapped
    onto the source/drain electrodes to prevent the increase in access resistance
    caused by the exclusion of the surface-transfer doping. However, it is known that
    gate overlap increases parasitic capacitance and gate leak current. In this study,
    we developed a technique for self-aligning the gate electrode with the edge of
    h-BN using oblique-angle deposition. The diamond FET with self-aligned gate electrode
    exhibits optimal FET characteristics, including high mobility of ≈400 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>,
    low sheet resistance of 2.4 kOhm, and output characteristics demonstrating pinch-off
    behavior. Furthermore, the capacitance-voltage characteristics clearly indicate
    distinct ON and OFF states, validating the efficacy of this technique. This method
    enables the fabrication of diamond/h-BN FETs with no gate overlap and without
    increasing the access resistance, making it promising approach for developing
    high-speed, low-loss diamond FETs with a wide application scope.
  description_type: abstract
  lang: und

## Creator

- name: Yosuke Sasama
  role: author
  orcid: https://orcid.org/0000-0002-8358-6101
- name: Takuya Iwasaki
  role: author
  orcid: https://orcid.org/0000-0002-1103-2433
- name: Mohammad Monish
  role: author
  orcid: https://orcid.org/0000-0002-2352-2640
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Yamaguchi Takahide
  role: author
  orcid: https://orcid.org/0000-0003-0208-7317

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Hydrogen-terminated diamond
  schema: not_defined
- subject: Field-effect transistors
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined
- subject: Self-aligned gate electrode
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi,
    Yamaguchi Takahide; Self-aligned gate electrode for hydrogen-terminated diamond
    field-effect transistors with a hexagonal boron nitride gate insulator. Appl.
    Phys. Lett. 26 August 2024; 125 (9): 092103 and may be found at https://doi.org/10.1063/5.0224192'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '125'
  issue: '9'

## Conference



## Related item



## Funding

- identifier: JPNP14004
  funder_name: New Energy and Industrial Technology Development Organization
- identifier: JP22H01962
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP1223NM5196
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: eeeff644-bdf3-4354-afe7-3bfd03b1049c
  filename: AcceptedManuscript_Sasama_2024_APL24-AR-05220.pdf
  content_type: application/pdf
  size: 776686
  md5: dd6932a8f0758277bf2d9eeee7be806f

## Thumbnail

fileset_id: eeeff644-bdf3-4354-afe7-3bfd03b1049c
filename: AcceptedManuscript_Sasama_2024_APL24-AR-05220.pdf