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The growing demand for autonomous, sustainable, and delocalized power sources for low-power-consuming electronic devices is driving a significant research effort on energy harvesting technologies. Among these, micro-thermoelectric generators (µTEGs) emerge as an appealing solution because of the abundance of residual latent heat sources. This paper proposes an approach to combine high-performance thermoelectric oxides with Si-based µTEGs, leveraging the miniaturization and high-density integration of CMOS-like technologies. The approach is applied to the integration of niobium doped strontium titanate (Nb:STO) thin films on Si-based planar µTEG structures. The Nb:STO-based µTEG achieves a specific power density Γ = 0.36 nW·cm−2 ·K−2 under controlled temperature gradients, which is below state-of-the-art performance probably due to lower electrical conductivity from polycrystalline growth. When the chips were tested under realistic operating conditions – placed on a hot surface at 175 °C – a maximum power output of p = 0.07 nW was obtained. Nonetheless, by implementing a technological solution for thermal dissipation, the temperature gradient across the thermoelectric material improved by a factor of 110, resulting in a significantly higher extracted power of p = 7.75 nW.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Thermoelectric, micro-thermoelectric generator, thin-films, SrTiO₃, IoT

刊行年月日: 2026-05-08

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 2665920

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6308

公開URL: https://doi.org/10.1080/14686996.2026.2665920

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更新時刻: 2026-05-21 11:58:16 +0900

MDRでの公開時刻: 2026-05-21 14:27:34 +0900