論文 Magnetic-field induced dimensionality switch of charge density waves in strained 2H-NbSe2 surface

Ryo Ichikawa ; Yukiko K. Takahashi SAMURAI ORCID ; Eiichi Inami ; Toyo Kazu Yamada

コレクション

引用
Ryo Ichikawa, Yukiko K. Takahashi, Eiichi Inami, Toyo Kazu Yamada. Magnetic-field induced dimensionality switch of charge density waves in strained 2H-NbSe2 surface. npj 2D Materials and Applications. 2025, 9 (1), 59. https://doi.org/10.1038/s41699-025-00584-y

説明:

(abstract)

Thinning van der Waals crystals to monolayers is crucial for nanoelectronic devices but often
introduces strain, altering their electronic properties. This study explores how strain affects the charge
density wave (CDW) in 2H niobium diselenide (2H-NbSe2), focusing on a transition from a 2 × 2 to a 1Q
CDW phase under weak magnetic fields (~30 mT), revealing high magnetic sensitivity. The strained
2H-NbSe2 surface, prepared via vacuum and tape exfoliation, exhibits a 2 × 2 CDW phase observed
using low-temperature (4.3 K) scanning tunneling microscopy and spectroscopy (STM/STS)
combined with scanning electron microscopy (SEM) and cross-sectional transmission electron
microscopy (TEM) under ultrahigh vacuum (UHV) conditions. STS maps show the 2 × 2 CDW around
±100 meV from the Fermi level. Upon applying a magnetic field, a localized 1Q stripe CDW pattern
emerges near ±40 meV. These results highlight the influence of strain and magnetic fields on CDW
behavior in 2D materials.

権利情報:

キーワード: 2H-NbSe2

刊行年月日: 2025-07-09

出版者: Springer Science and Business Media LLC

掲載誌:

  • npj 2D Materials and Applications (ISSN: 23977132) vol. 9 issue. 1 59

研究助成金:

  • Japan Society for the Promotion of Science 23H02033
  • Murata Science Foundation
  • Shorai Foundation for Science and Technology
  • TEPCO Memorial Foundation
  • Casio Science Promotion Foundation
  • Toshiaki Ogasawara Memorial Foundation

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-025-00584-y

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更新時刻: 2025-08-18 16:30:54 +0900

MDRでの公開時刻: 2025-08-18 16:21:29 +0900

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