# Electrically Switching Ferroelectric Order in 3R-MoS<sub>2</sub> Layers

https://mdr.nims.go.jp/datasets/b04d3def-ea91-4902-a097-c1bd31fef0f6

## File

- [ouyang-et-al-2025-electrically-switching-ferroelectric-order-in-3r-mos2-layers.pdf](https://mdr.nims.go.jp/filesets/6ec55664-f87e-4451-b2a5-7373ee85a1f1/download) ([Detail](https://mdr.nims.go.jp/filesets/6ec55664-f87e-4451-b2a5-7373ee85a1f1.md))

## Id

b04d3def-ea91-4902-a097-c1bd31fef0f6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T02:17:09.358436Z

## Updated at

2026-02-16T23:30:50.558884Z

## Published at

2026-02-16T09:00:51.731268Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.4c05370

## Date published

2025-01-29

## Recorded date published

2025-1-29

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electrically Switching Ferroelectric Order in 3R-MoS<sub>2</sub> Layers
  title_type: original
  lang: en

## Description

- description: Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking
    order are excellent platforms to realize multi-ferroelectricity. In this work,
    we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer,
    and tetralayer 3R-MoS2 dual-gate devices by examining their reflection and photoluminescence
    (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts
    in excitonic spectra at different critical fields with pronounced hysteresis.
    These phenomena are attributed to distinct interlayer polarizations resulting
    from specific lateral displacements between the layers, with each configuration
    yielding a unique ferroelectric state. Our findings indicate two, three and four
    ferroelectric regimes for bilayer, trilayer, and tetralayer structures, respectively,
    in agreement with theoretical prediction. Moreover, each polarization state can
    be stabilized at zero applied electric field. The tunable ferroelectric phases
    of these multilayers pave the way for innovative applications in non-volatile
    memory, logic circuits, and optoelectronic devices.
  description_type: abstract
  lang: und

## Creator

- name: Tianyi Ouyang
  role: author
- name: Soonyoung Cha
  role: author
- name: Yiyang Sun
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Nathaniel M. Gabor
  role: author
- name: Chun Hung Lui
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 'ferroelectric order
    '
  schema: not_defined
- subject: '3R-MoS2
    '
  schema: not_defined
- subject: electrical switching
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/
  date_licensed: 2025-01-14

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '4'
  start_page: 1459
  end_page: 1465

## Conference



## Related item



## Funding

- identifier: FA9550-20-1-0097
  funder_name: Air Force Office of Scientific Research
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: '1945660'
  funder_name: Division of Materials Research
- identifier: W911NF2110260
  funder_name: Army Research Office Electronics Division

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 6ec55664-f87e-4451-b2a5-7373ee85a1f1
  filename: ouyang-et-al-2025-electrically-switching-ferroelectric-order-in-3r-mos2-layers.pdf
  content_type: application/pdf
  size: 7482101
  md5: eaeb6d2a4b97e61b31b3014b0da723e8

## Thumbnail

fileset_id: 6ec55664-f87e-4451-b2a5-7373ee85a1f1
filename: ouyang-et-al-2025-electrically-switching-ferroelectric-order-in-3r-mos2-layers.pdf