# Lattice-matched (Al                    <i>x</i>                    Sc                    <i>y</i>                    Ga1−                    <i>x</i>                    −                    <i>y</i>                    )2O3/                                          <i>β</i>                                        -Ga2O3 heterostructures with widely tunable bandgap

https://mdr.nims.go.jp/datasets/af24fac8-eac7-43c5-bdc1-c8689dc3826f

## File

- [260206_ASGO_Letter_manuscript_v6.pdf](https://mdr.nims.go.jp/filesets/81d4e5ed-4c41-4d04-9c78-aea651660a5f/download) ([Detail](https://mdr.nims.go.jp/filesets/81d4e5ed-4c41-4d04-9c78-aea651660a5f.md))

## Id

af24fac8-eac7-43c5-bdc1-c8689dc3826f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-05T08:21:01.405648Z

## Updated at

2026-08-06T00:39:59.219744Z

## Published at

2026-08-06T03:26:57.484408Z

## Doi

https://doi.org/10.48505/nims.6446

## First published url

https://doi.org/10.1063/5.0326523

## Date published

2026-07-06

## Recorded date published

2026-7-6

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: |-
    Lattice-matched (Al
                        <i>x</i>
                        Sc
                        <i>y</i>
                        Ga1−
                        <i>x</i>
                        −
                        <i>y</i>
                        )2O3/
                        <b>
                          <i>β</i>
                        </b>
                        -Ga2O3 heterostructures with widely tunable bandgap
  title_type: original
  lang: en

## Description

- description: "Bandgap engineering of β-Ga2O3 is essential for advancing its electronic
    and optoelectronic\r\napplications. However, the growth of high-quality heteroepitaxial
    structures is often hampered by\r\nlarge lattice mismatches. In this study, we
    design (AlxScyGa1−x−y)2O3 quaternary alloys in the form of both polycrystalline
    powders and heteroepitaxial films and demonstrate their lattice matching to β15
    Ga2O3. Powder x-ray diffraction (XRD) measurements reveal that the lattice parameters
    of monoclinic(AlxScyGa0.8)2O3 match those of β-Ga2O3 when x/y = 1.5–3.2. (AlxScyGa1−x−y)2O3
    thin films are grown on β-Ga2O3 (100) substrates by pulsed-laser deposition by
    varying the composition ratio x/y and the total substitutional fraction x + y.
    Nearly perfect lattice-matched epilayers with uniform composition and crystal
    structure are obtained up to x + y ~ 0.6, as confirmed by XRD and scanning transmission
    electron microscopy. Electron energy loss spectroscopy reveals a tunable bandgap
    from 4.5 to 5.8 eV. These results demonstrate that (AlxScyGa1−x−y)2O3/β-Ga2O3
    heterostructures are promising platforms for ultrawide-bandgap semiconductor devices. "
  description_type: abstract
  lang: und

## Creator

- name: Kazuki Koreishi
  role: author
  orcid: https://orcid.org/0009-0000-1580-8262
- name: Kodai Niitsu
  role: author
  orcid: https://orcid.org/0000-0002-0430-8868
- name: Takuto Soma
  role: author
  orcid: https://orcid.org/0000-0001-8685-9606
- name: Kohei Yoshimatsu
  role: author
  orcid: https://orcid.org/0000-0001-9288-068X
- name: Akira Ohtomo
  role: author
  orcid: https://orcid.org/0000-0003-0300-4712

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: Wide bandgap
  schema: not_defined
- subject: Bandgap engineering
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Kazuki Koreishi, Kodai Niitsu, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo;
    Lattice-matched (AlxScyGa1−x−y)2O3/β-Ga2O3 heterostructures with widely tunable
    bandgap. Appl. Phys. Lett. 6 July 2026; 129 (1): 012102 and may be found at https://doi.org/10.1063/5.0326523.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '129'
  issue: '1'
  article_number: '012102'

## Conference



## Related item



## Funding

- identifier: JP21H02026
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXS0420900524
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JP25K01663
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H04505
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24H00480
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJPR22Q3
  funder_name: Precursory Research for Embryonic Science and Technology
- identifier: JPMJPR22Q6
  funder_name: Precursory Research for Embryonic Science and Technology
- identifier: JPMJSP2180
  funder_name: Support for Pioneering Research Initiated by the Next Generation

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 81d4e5ed-4c41-4d04-9c78-aea651660a5f
  filename: 260206_ASGO_Letter_manuscript_v6.pdf
  content_type: application/pdf
  size: 2292348
  md5: f265b5f9cdb5e1fc67d1ccad70c6e0e5

## Thumbnail

fileset_id: 81d4e5ed-4c41-4d04-9c78-aea651660a5f
filename: 260206_ASGO_Letter_manuscript_v6.pdf