# Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

https://mdr.nims.go.jp/datasets/ae4e14f5-a303-4658-98e5-9d09d3bd26b6

## File

- [Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography.pdf](https://mdr.nims.go.jp/filesets/4d01db66-1101-4b2e-8190-4196857d3804/download) ([Detail](https://mdr.nims.go.jp/filesets/4d01db66-1101-4b2e-8190-4196857d3804.md))

## Id

ae4e14f5-a303-4658-98e5-9d09d3bd26b6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-11T06:36:17.498673Z

## Updated at

2025-07-09T23:30:19.786447Z

## Published at

2025-07-09T23:15:54.943973Z

## Doi

https://doi.org/10.48505/nims.4589

## First published url

https://doi.org/10.1021/acsaelm.4c00877

## Date published

2024-07-10

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects
    Probed by Monoenergetic Positron Beams and Atom Probe Tomography
  title_type: original
  lang: en

## Description

- description: Positron annihilation and atom probe tomography were used to study
    vacancy-type defects and their interaction with oxygen in 100-nm thick NixAl1‒x
    deposited on a SiO2/Si substrate. For as-deposited Ni0.50Al0.50, (i) monovacancy
    (V) and divacancy-type defects and (ii) vacancy clusters were found to coexist,
    and the clusters were estimated to be larger than V10. Although no large change
    in the size of these vacancies was observed after post-deposition annealing below
    500C, the concentration of vacancy clusters decreased as temperature increased.
    Upon annealing, oxygen diffused mainly through grain boundaries. The oxygen incorporation
    was enhanced in NixAl1‒x with high Ni content. The consumption of Al by surface
    oxides under Ni-rich conditions introduced defect-rich regions, and as a result,
    oxygen incorporation was enhanced likely via vacancy-assisted diffusion. The incorporated
    oxygen tended to couple with vacancies and form vacancy-oxygen complexes that
    were stable at 800C annealing.
  description_type: abstract
  lang: und

## Creator

- name: Akira Uedono
  role: author
  orcid: https://orcid.org/0000-0001-6224-4869
- name: Claudia Fleischmann
  role: author
  orcid: https://orcid.org/0000-0003-1531-6916
- name: Jean-Philippe Soulié
  role: author
- name: Mustafa Ayyad
  role: author
- name: Jeroen E. Scheerder
  role: author
  orcid: https://orcid.org/0000-0002-9301-0392
- name: Christoph Adelmann
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Koji Michishio
  role: author
  orcid: https://orcid.org/0000-0003-1381-7856
- name: Nagayasu Oshima
  role: author
- name: Shoji Ishibashi
  role: author
  orcid: https://orcid.org/0000-0002-4896-3530

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: atom probe tomography
  schema: not_defined
- subject: positron annihilation
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Electronic Materials, copyright © 2024
    American Chemical Society after peer review and technical editing by the publisher.
    To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00877
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-07-10
end_date: 2025-07-10

## Journal

- title: ACS Applied Electronic Materials
  issn: '26376113'

## Conference



## Related item



## Funding

- identifier: JPMXP1223AT5043
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJAP2321
  funder_name: Japan Science and Technology Corporation
- funder_name: Tsukuba Materials Research

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 4d01db66-1101-4b2e-8190-4196857d3804
  filename: Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects
    Probed by Monoenergetic Positron Beams and Atom Probe Tomography.pdf
  content_type: application/pdf
  size: 1327983
  md5: 2f426825e7cf825c092b525b9a7949fb

## Thumbnail

fileset_id: 4d01db66-1101-4b2e-8190-4196857d3804
filename: Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects
  Probed by Monoenergetic Positron Beams and Atom Probe Tomography.pdf