# An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers

https://mdr.nims.go.jp/datasets/adf5343d-378d-44fe-8e43-b30904f876dc

## File

- [【正式版】Advanced Physics Research - 2026 - Kawamura - An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon.pdf](https://mdr.nims.go.jp/filesets/966bf94a-d27d-4347-a95e-e9e6ef7d1c3e/download) ([Detail](https://mdr.nims.go.jp/filesets/966bf94a-d27d-4347-a95e-e9e6ef7d1c3e.md))

## Id

adf5343d-378d-44fe-8e43-b30904f876dc

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-09-16T07:54:29.582687Z

## Updated at

2026-09-17T04:05:42.490708Z

## Published at

2026-09-17T05:30:18.164548Z

## Doi



## First published url

https://doi.org/10.1002/apxr.70143

## Date published

2026-05-29

## Recorded date published

2026-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
  title_type: original
  lang: en

## Description

- description: 'We have developed a straightforward sputtering method to grow high-quality
    gallium nitride (GaN) epitaxial films on Si(111) substrates. The resulting GaN-on-Si
    films exhibit low vertical resistance with ohmic behaviour and excellent thermal
    stability. Furthermore, these sputtered layers serve as effective templates for
    the subsequent growth of device-quality GaN via metalorganic chemical vapor deposition
    (MOCVD). Our technique relies on the formation of an ultrathin silicide buffer
    layer, created by depositing a sub-nanometer (~0.5 nm) metal film and applying
    rapid thermal annealing prior to GaN deposition. A key advantage is the method''s
    remarkable versatility; we successfully achieved epitaxy using 25 different ultrathin
    metal films. Scanning transmission electron microscopy (STEM) analysis revealed
    the underlying mechanism: the ultrathin, amorphous-like interlayer accommodates
    the large lattice mismatch between GaN and Si, thereby relaxing strain, while
    simultaneously acting as a barrier to prevent detrimental reactions between silicon
    and gallium.'
  description_type: abstract
  lang: und

## Creator

- name: Fumio Kawamura
  role: author
  orcid: https://orcid.org/0000-0003-0724-1475
- name: Takeyoshi Onuma
  role: author
- name: Kazutaka Mitsuishi
  role: author
  orcid: https://orcid.org/0000-0002-9361-4057

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: GaN on Si
  schema: not_defined
- subject: Epitaxial
  schema: not_defined
- subject: Buffer
  schema: not_defined
- subject: Sputtering
  schema: not_defined
- subject: MOCVD
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Physics Research
  issn: '27511200'
  volume: '5'
  issue: '7'
  article_number: e70143

## Conference



## Related item



## Funding

- identifier: JPMJTR25T5
  funder_name: Japan Science and Technology Agency
- identifier: JPMXP1225NM5364
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 966bf94a-d27d-4347-a95e-e9e6ef7d1c3e
  filename: "【正式版】Advanced Physics Research - 2026 - Kawamura - An Advanced Epitaxial
    Strategy Enabling Vertical GaN Devices on Silicon.pdf"
  content_type: application/pdf
  size: 4827678
  md5: 9235c84edb066325c6a19031fa1d35f0

## Thumbnail

fileset_id: 966bf94a-d27d-4347-a95e-e9e6ef7d1c3e
filename: "【正式版】Advanced Physics Research - 2026 - Kawamura - An Advanced Epitaxial
  Strategy Enabling Vertical GaN Devices on Silicon.pdf"