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We have developed a straightforward sputtering method to grow high-quality gallium nitride (GaN) epitaxial films on Si(111) substrates. The resulting GaN-on-Si films exhibit low vertical resistance with ohmic behaviour and excellent thermal stability. Furthermore, these sputtered layers serve as effective templates for the subsequent growth of device-quality GaN via metalorganic chemical vapor deposition (MOCVD). Our technique relies on the formation of an ultrathin silicide buffer layer, created by depositing a sub-nanometer (~0.5 nm) metal film and applying rapid thermal annealing prior to GaN deposition. A key advantage is the method's remarkable versatility; we successfully achieved epitaxy using 25 different ultrathin metal films. Scanning transmission electron microscopy (STEM) analysis revealed the underlying mechanism: the ultrathin, amorphous-like interlayer accommodates the large lattice mismatch between GaN and Si, thereby relaxing strain, while simultaneously acting as a barrier to prevent detrimental reactions between silicon and gallium.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GaN on Si, Epitaxial, Buffer, Sputtering, MOCVD

刊行年月日: 2026-05-29

出版者: Wiley

掲載誌:

• Advanced Physics Research (ISSN: 27511200) vol. 5 issue. 7 e70143

研究助成金:

• Japan Science and Technology Agency JPMJTR25T5
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225NM5364

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/apxr.70143

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更新時刻: 2026-09-17 13:05:42 +0900

MDRでの公開時刻: 2026-09-17 14:30:18 +0900