# Atomic-scale observation of native oxides on                    <i>c</i>                    - and                    <i>m</i>                    -faced GaN surfaces

https://mdr.nims.go.jp/datasets/ad8ab4aa-df56-44c0-b4ac-83af5e694e5a

## File

- [Atomic-scale observation of native oxides on c- and m-faced GaN surfaces.pdf](https://mdr.nims.go.jp/filesets/4e8b8fbd-3467-47a3-bce2-4b80b0a73f7e/download) ([Detail](https://mdr.nims.go.jp/filesets/4e8b8fbd-3467-47a3-bce2-4b80b0a73f7e.md))

## Id

ad8ab4aa-df56-44c0-b4ac-83af5e694e5a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-04-02T00:27:04.219825Z

## Updated at

2026-04-02T01:10:21.466433Z

## Published at

2026-04-02T03:25:43.948447Z

## Doi

https://doi.org/10.48505/nims.6241

## First published url

https://doi.org/10.1063/5.0322514

## Date published

2026-04-01

## Recorded date published

2026-4-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: |-
    Atomic-scale observation of native oxides on
                        <i>c</i>
                        - and
                        <i>m</i>
                        -faced GaN surfaces
  title_type: original
  lang: en

## Description

- description: Controlling the dielectric/semiconductor interfaces is essential for
    the development of semiconductor power devices. Gallium nitride (GaN) has attracted
    significant attention as a next-generation semiconductor owing to its superior
    properties; however, controlling the dielectric/GaN interface remains a critical
    challenge unlike silicon (Si). In this study, we observed native oxides formed
    on both the c-face and m-face GaN surfaces after simple air exposure using scanning
    transmission electron microscopy. Oxygen diffusion into Si crystal was significantly
    suppressed by the formation of a SiOx layer; on the other hand, gradual oxygen
    diffusion (Ga-N-O layer) with ~ 2.0 nm depths into the GaN crystal was observed.
    Remarkably, 1.5 times larger amount oxygen was incorporated in the m-face than
    in the c-face GaN. These findings provide key insights into the control of dielectric/GaN
    interfaces and may facilitate the development of GaN-based power devices.
  description_type: abstract
  lang: und

## Creator

- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Yoshihiro Irokawa
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
- name: Yasuo Koide
  role: author
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: transmission electron microscopy
  schema: not_defined
- subject: gallium nitride
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: AIP Advances
  issn: '21583226'
  volume: '16'
  issue: '4'
  article_number: '045004'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: Ministry of Education, Culture, Sports, Science, and Technology
- identifier: JPMXP1223NM5088
  funder_name: Ministry of Education, Culture, Sports, Science, and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 4e8b8fbd-3467-47a3-bce2-4b80b0a73f7e
  filename: Atomic-scale observation of native oxides on c- and m-faced GaN surfaces.pdf
  content_type: application/pdf
  size: 1680197
  md5: b57cf675081ca600859cb4f6529fab53

## Thumbnail

fileset_id: 4e8b8fbd-3467-47a3-bce2-4b80b0a73f7e
filename: Atomic-scale observation of native oxides on c- and m-faced GaN surfaces.pdf