# Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics

https://mdr.nims.go.jp/datasets/ad661eca-9bb5-42dd-87d8-969e22119642

## File

- [IEEE_EDL_LED.2026.3685167_Figure_Correction_SourceFile.docx](https://mdr.nims.go.jp/filesets/0fa2179a-f85e-4f58-8cde-c17918997cd6/download) ([Detail](https://mdr.nims.go.jp/filesets/0fa2179a-f85e-4f58-8cde-c17918997cd6.md))

## Id

ad661eca-9bb5-42dd-87d8-969e22119642

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-19T03:02:30.984408Z

## Updated at

2026-06-19T04:22:46.314050Z

## Published at

2026-06-19T05:29:52.902916Z

## Doi

https://doi.org/10.48505/nims.6346

## First published url

https://doi.org/10.1109/led.2026.3685167

## Date published

2026-04-20

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature
    Electronics
  title_type: original
  lang: en

## Description

- description: We demonstrate improved ohmic contact on n-type AlN using Zr/Al/Mo/Au
    metal stack with contact resistivities of ~10-3 Ω⋅cm2 at 25°C and ~10-5 Ω⋅cm2
    at 500°C, which is over one and two orders of magnitude lower than Ti-based contacts,
    respectively. Temperature-dependent I-V characteristics reveal thermionic-field
    emission-dominated transport at the Zr/AlN interface, leading to improved conductivity
    and ohmic behavior above 400°C. Record-low specific on-resistance (Ron,sp) is
    achieved here using Zr-based cathode among all lateral AlN Schottky barrier diodes
    at comparable breakdown voltages. The devices reveal 10× enhanced Baliga Figure
    of Merit at 300°C and 500°C due to significantly lowered Ron,sp < 50 mΩ⋅cm2.
  description_type: abstract
  lang: und

## Creator

- name: Zhongyunshen Zhu
  role: author
- name: Hridibrata Pal
  role: author
- name: Aditya Dev Varma
  role: author
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
  organization: National Institute for Materials Science
- name: Hironori Okumura
  role: author
- name: Tomás Palacios
  role: author

## Contact agent



## Publisher

organization: National Institute for Materials Science
ror: https://ror.org/

## Managing organization



## Keyword

- subject: AlN
  schema: not_defined
- subject: Zr-based ohmic contact
  schema: not_defined
- subject: High-Temperature Electronics
  schema: not_defined
- subject: High-temperature electronics
  schema: not_defined
- subject: Schottky barrier diode
  schema: not_defined

## Rights

- description: "© 2026 IEEE.  Personal use of this material is permitted.  Permission
    from IEEE must be obtained for all other uses, in any current or future media,
    including reprinting/republishing this material for advertising or promotional
    purposes, creating new collective works, for resale or redistribution to servers
    or lists, or reuse of any copyrighted component of this work in other works."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Electron Device Letters
  issn: '07413106'
  volume: '47'
  issue: '6'
  start_page: 1077
  end_page: 1080

## Conference



## Related item



## Funding

- identifier: SPC-1000007046
  funder_name: U.S. Army Research Office (ARO)/The Ohio State University
- identifier: GR129057
  funder_name: U.S. Army Research Office (ARO)/The Ohio State University
- identifier: W911NF2320057
  funder_name: U.S. Army Research Laboratory (ARL) and ARO
- identifier: KAW2023.0471
  funder_name: Wallenberg Foundation
- identifier: FA9550-22-1-0367
  funder_name: Air Force Office of Scientific Research
- identifier: 23K26556
  funder_name: the Japan Society for the Promotion of Science (JSPS)/KAKENHI
- identifier: 25K01297
  funder_name: the Japan Society for the Promotion of Science (JSPS)/KAKENHI

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: 0fa2179a-f85e-4f58-8cde-c17918997cd6
  filename: IEEE_EDL_LED.2026.3685167_Figure_Correction_SourceFile.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 8585235
  md5: 38cb2a8a7b32296c1b3e5c5e26b10720

## Thumbnail

fileset_id: 0fa2179a-f85e-4f58-8cde-c17918997cd6
filename: IEEE_EDL_LED.2026.3685167_Figure_Correction_SourceFile.docx