# Steep-slope Schottky diode with cold metal source

https://mdr.nims.go.jp/datasets/ad61bd53-92bc-4f50-90d6-4ceb28d22bc7

## File

- [5.0097408.pdf](https://mdr.nims.go.jp/filesets/ea449719-393d-41ba-844a-01231da9a9dd/download) ([Detail](https://mdr.nims.go.jp/filesets/ea449719-393d-41ba-844a-01231da9a9dd.md))

## Id

ad61bd53-92bc-4f50-90d6-4ceb28d22bc7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T04:57:15.996924Z

## Updated at

2025-02-25T23:30:57.364552Z

## Published at

2025-02-25T23:30:57.447362Z

## Doi



## First published url

https://doi.org/10.1063/5.0097408

## Date published

2022-06-13

## Recorded date published

2022-6-13

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Steep-slope Schottky diode with cold metal source
  title_type: original
  lang: en

## Description

- description: Today’s circuit technology requires low-power transistors and diodes
    to extend Moore’s law. While research efforts have been focused on reducing power
    consumption of trasistors, low-power diodes have not been widely studied. Here,
    we report a low-power, thus steep-slope Schottky diode with “cold metal” source.
    The Schottky barrier between metal electrode and bulk MoS2 enabled the diode behavior,
    and the steep-slope diode IV curve originates from the change in the density of
    states (DOSs) of a graphite (cold metal) source with a bias voltage. The MoS2
    Schottky diode with a cold-metal exhibits an ideality factor (η) < 1 for more
    than three decades of drain current with a sizeable rectifying ratio (105). The
    realization of a steep-slope Schottky diode paves the way to the improvement of
    low-power circuit technology.
  description_type: abstract
  lang: und

## Creator

- name: Wongil Shin
  role: author
- name: Gyuho Myeong
  role: author
- name: Kyunghwan Sung
  role: author
- name: Seungho Kim
  role: author
- name: Hongsik Lim
  role: author
- name: Boram Kim
  role: author
- name: Taehyeok Jin
  role: author
- name: Jihoon Park
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Fei Liu
  role: author
- name: Sungjae Cho
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Low-power transistors
  schema: not_defined
- subject: Schottky diode
  schema: not_defined
- subject: MoS2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '120'
  issue: '24'
  article_number: '243506'

## Conference



## Related item



## Funding

- identifier: 2019M3F3A1A03079760
  funder_name: National Research Foundation of Korea
- identifier: 2020M3F3A2A01081899
  funder_name: National Research Foundation of Korea
- identifier: 2020R1A2C2100258
  funder_name: National Research Foundation of Korea
- identifier: '61974003'
  funder_name: Data Center of Management Science, National Natural Science Foundation
    of China - Peking University

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ea449719-393d-41ba-844a-01231da9a9dd
  filename: 5.0097408.pdf
  content_type: application/pdf
  size: 3879336
  md5: 109039d27a9c1df7c17c5fc04699a645

## Thumbnail

fileset_id: ea449719-393d-41ba-844a-01231da9a9dd
filename: 5.0097408.pdf