# Dark exciton-exciton annihilation in monolayer <math>  <msub>    <mrow>      <mi>WSe</mi>    </mrow>    <mn>2</mn>  </msub></math>

https://mdr.nims.go.jp/datasets/ad1afb89-a388-40b6-88e0-6ebd8125071c

## File

- [PhysRevB.104.L241406.pdf](https://mdr.nims.go.jp/filesets/5dacbbde-3a8b-4942-89ef-06f285d6203e/download) ([Detail](https://mdr.nims.go.jp/filesets/5dacbbde-3a8b-4942-89ef-06f285d6203e.md))

## Id

ad1afb89-a388-40b6-88e0-6ebd8125071c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-27T06:09:29.594203Z

## Updated at

2025-02-27T23:31:28.501754Z

## Published at

2025-02-27T23:31:28.569086Z

## Doi



## First published url

https://doi.org/10.1103/physrevb.104.l241406

## Date published

2021-12-17

## Recorded date published

2021-12

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "Dark exciton-exciton annihilation in monolayer \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>"
  title_type: original
  lang: en

## Description

- description: The exceptionally strong Coulomb interaction in semiconducting transition-metal
    dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright
    and dark exciton states. At elevated densities, excitons can interact through
    exciton-exciton annihilation (EEA), an Auger-like recombination process limiting
    the efficiency of optoelectronic applications. Although EEA is a well- known and
    particularly important process in atomically thin semiconductors determining exciton
    lifetimes and affecting transport at elevated densities, its microscopic origin
    has remained elusive. In this joint theory-experiment study combining microscopic
    and material-specific theory with time- and temperature-resolved photoluminescence
    measurements, we demonstrate the key role of dark intervalley states that are
    found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic
    temperature dependence of Auger scattering in this class of materials with an
    excellent agreement between theory and experiment. Our study provides microscopic
    insights into the efficiency of technologically relevant Auger scattering channels
    within the remarkable exciton landscape of atomically thin semiconductors.
  description_type: abstract
  lang: und

## Creator

- name: Daniel Erkensten
  role: author
- name: Samuel Brem
  role: author
- name: Koloman Wagner
  role: author
- name: Roland Gillen
  role: author
- name: Raül Perea-Causín
  role: author
- name: Jonas D. Ziegler
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Janina Maultzsch
  role: author
- name: Alexey Chernikov
  role: author
- name: Ermin Malic
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Coulomb interaction
  schema: not_defined
- subject: exciton-exciton annihilation
  schema: not_defined
- subject: WSe2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



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## Embargo



## Journal

- title: Physical Review B
  issn: 1550235X
  volume: '104'
  issue: '24'
  article_number: L241406

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## Funding

- funder_name: Universität Regensburg
- identifier: B09
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: B05
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: B13
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '881603'
  funder_name: Horizon 2020
- identifier: JPMXP0112101001
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JP19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: JP20H00354
  funder_name: Japan Society for the Promotion of Science

## Instrument



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## Fileset

- id: 5dacbbde-3a8b-4942-89ef-06f285d6203e
  filename: PhysRevB.104.L241406.pdf
  content_type: application/pdf
  size: 1231665
  md5: 80930d9c4bb57cb38b0a12fe3deb8efd

## Thumbnail

fileset_id: 5dacbbde-3a8b-4942-89ef-06f285d6203e
filename: PhysRevB.104.L241406.pdf