Dark exciton-exciton annihilation in monolayer 
<math>
  <msub>
    <mrow>
      <mi>WSe</mi>
    </mrow>
    <mn>2</mn>
  </msub>
</math>

Daniel Erkensten; Samuel Brem; Koloman Wagner; Roland Gillen; Raül Perea-Causín; Jonas D. Ziegler; Takashi Taniguchi; Kenji Watanabe; Janina Maultzsch; Alexey Chernikov; Ermin Malic

doi:10.1103/physrevb.104.l241406

論文 Dark exciton-exciton annihilation in monolayer

{WSe}_{2}

Daniel Erkensten ; Samuel Brem ; Koloman Wagner ; Roland Gillen ; Raül Perea-Causín ; Jonas D. Ziegler ; Takashi Taniguchi (National Institute for Materials Science) ; Kenji Watanabe (National Institute for Materials Science) ; Janina Maultzsch ; Alexey Chernikov ; Ermin Malic

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Daniel Erkensten, Samuel Brem, Koloman Wagner, Roland Gillen, Raül Perea-Causín, Jonas D. Ziegler, Takashi Taniguchi, Kenji Watanabe, Janina Maultzsch, Alexey Chernikov, Ermin Malic. Dark exciton-exciton annihilation in monolayer

{WSe}_{2}

. Physical Review B. 2021, 104 (24), L241406. https://doi.org/10.1103/physrevb.104.l241406

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(abstract)

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well- known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.

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