# Quantum Light Generation with Ultra‐High Spatial Resolution in 2D Semiconductors via Ultra‐Low Energy Electron Irradiation

https://mdr.nims.go.jp/datasets/ac5c7fae-e550-4ade-9cdb-0aacd82fc2a1

## File

- [2025A01012G_manuscript_dash_AFM.pdf](https://mdr.nims.go.jp/filesets/2542d3a9-1107-480e-bba8-0343c127fdda/download) ([Detail](https://mdr.nims.go.jp/filesets/2542d3a9-1107-480e-bba8-0343c127fdda.md))

## Id

ac5c7fae-e550-4ade-9cdb-0aacd82fc2a1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-30T02:16:21.683245Z

## Updated at

2026-07-03T04:53:43.102661Z

## Published at

2026-07-03T07:29:23.253935Z

## Doi



## First published url

https://doi.org/10.1002/adfm.202421684

## Date published

2025-02-16

## Recorded date published

2025-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Quantum Light Generation with Ultra‐High Spatial Resolution in 2D Semiconductors
    via Ultra‐Low Energy Electron Irradiation
  title_type: original
  lang: en

## Description

- description: Single photon emitters (SPEs) are building blocks of quantum technologies.
    Defect engineering of two-dimensional (2D) materials is ideal to fabricate SPEs,
    wherein spatially deterministic and quality-preserving fabrication methods are
    critical for integration into quantum devices and cavities. Existing methods use
    combination of strain and electron irradiation, or ion irradiation, which make
    fabrication complex, and limited by surrounding lattice damage. Here, only ultra-low
    energy electron beam (e-beam) irradiation (5 keV) is utilized to create dilute
    defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution
    (<50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp
    defect peaks, following power-law for finite density of single defects, and characteristic
    Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral
    jitter (<200 µeV), and are tunable with gate-voltage and e-beam energy. Use of
    low-momentum electron irradiation, ease of processing, and high spatial resolution,
    will disrupt deterministic creation of high-quality SPEs.
  description_type: abstract
  lang: en

## Creator

- name: Ajit Kumar Dash
  role: author
- name: Sharad Kumar Yadav
  role: author
- name: Sebastien Roux
  role: author
- name: Manavendra Pratap Singh
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Akshay Naik
  role: author
- name: Cedric Robert
  role: author
- name: Xavier Marie
  role: author
- name: Akshay Singh
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Single photon emitters
  schema: not_defined
- subject: Two-dimensional materials
  schema: not_defined
- subject: Electron beam irradiation
  schema: not_defined

## Rights

- description: 'This is the peer reviewed version of the following article: A. K.
    Dash, S. K. Yadav, S. Roux, M. P. Singh, K. Watanabe, T. Taniguchi, A. Naik, C.
    Robert, X. Marie, A. Singh, Quantum Light Generation with Ultra-High Spatial Resolution
    in 2D Semiconductors via Ultra-Low Energy Electron Irradiation. Adv. Funct. Mater.2025,
    35, 2421684, which has been published in final form at https://doi.org/10.1002/adfm.202421684.
    This article may be used for non-commercial purposes in accordance with Wiley
    Terms and Conditions for Use of Self-Archived Versions. This article may not be
    enhanced, enriched or otherwise transformed into a derivative work, without express
    permission from Wiley or by statutory rights under applicable legislation. Copyright
    notices must not be removed, obscured or modified. The article must be linked
    to Wiley’s version of record on Wiley Online Library and any embedding, framing
    or otherwise making available the article or pages thereof by third parties from
    platforms, services and websites other than Wiley Online Library must be prohibited.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-02-16
end_date: 2026-02-16

## Journal

- title: Advanced Functional Materials
  issn: '16163028'
  volume: '35'
  issue: '27'
  article_number: '2421684'

## Conference



## Related item



## Funding

- identifier: ANR‐21‐ESRE‐ 0025
  funder_name: Agence Nationale de la Recherche
- identifier: ATOEMS
  funder_name: Agence Nationale de la Recherche
- identifier: IXTASE
  funder_name: Agence Nationale de la Recherche

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 2542d3a9-1107-480e-bba8-0343c127fdda
  filename: 2025A01012G_manuscript_dash_AFM.pdf
  content_type: application/pdf
  size: 942366
  md5: 931cff3b3c37d6427aff59ef0b43c5a3

## Thumbnail

fileset_id: 2542d3a9-1107-480e-bba8-0343c127fdda
filename: 2025A01012G_manuscript_dash_AFM.pdf