# Planar-type SiGe thermoelectric generator with double cavity structure

https://mdr.nims.go.jp/datasets/ac2ddd30-ae49-411d-97d3-e8c3d85f4b8f

## File

- [2023_Koike_SiGe_TE_device_draft-TM-初期投稿.pdf](https://mdr.nims.go.jp/filesets/217239c0-d3c1-45c3-ae3b-29df9e170f06/download) ([Detail](https://mdr.nims.go.jp/filesets/217239c0-d3c1-45c3-ae3b-29df9e170f06.md))

## Id

ac2ddd30-ae49-411d-97d3-e8c3d85f4b8f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-31T12:06:51.340144Z

## Updated at

2024-08-01T07:30:16.281609Z

## Published at

2024-08-01T07:30:16.350860Z

## Doi

https://doi.org/10.48505/nims.4616

## First published url

https://doi.org/10.1063/5.0191450

## Date published

2024-03-18

## Recorded date published

2024-3-18

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Planar-type SiGe thermoelectric generator with double cavity structure
  title_type: original
  lang: en

## Description

- description: "Thermoelectric power generation is a promising technology that can
    directly convert thermal energy into electrical energy and is expected to be applied
    as power supplies for low-power electronic devices such as sensors. In particular,
    planar-type devices fabricated based on lithography processes not only enable
    significant device miniaturization and lower cost but also take advantage of materials
    with smaller dimensions, such as thin films and nanowires, which have attracted
    much attention in recent years. Silicon germanium (SiGe) is a promising thermoelectric
    material due to its relatively high power factor, low thermal conductivity, and
    compatibility with standard top-down fabrication process.\r\nWe design and fabricate
    a planar-type thermoelectric generator with a double cavity structure using a
    240 nm thick Si0.8Ge0.2 thin film and report its performance improvement. When
    the temperature difference is applied to the device, the measured power density
    of 100 µWcm−2 was achieved at ∆T = 15 K, namely, the performance normalized by
    the applied temperature was 0.43 µWcm−2K−2. Finally, the dependence of the device
    performance on SiGe film thicknessis discussed. The results from our simulation
    show that a maximum performance of 1.75 µWcm−2K−2 can be achieved by the current
    device structure, indicating the potential for future applications as thermoelectric
    energy harvesters."
  description_type: abstract
  lang: und

## Creator

- name: S. Koike
  role: author
- name: R. Yanagisawa
  role: author
- name: L. Jalabert
  role: author
- name: R. Anufriev
  role: author
- name: M. Kurosawa
  role: author
- name: T. Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: M. Nomura
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '124'
  issue: '12'
  article_number: '123902'

## Conference



## Related item



## Funding

- identifier: JP-MJCR19Q3
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJMI19A1
  funder_name: JST-Mirai Program
- identifier: 21H04635
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 217239c0-d3c1-45c3-ae3b-29df9e170f06
  filename: 2023_Koike_SiGe_TE_device_draft-TM-初期投稿.pdf
  content_type: application/pdf
  size: 9548377
  md5: eb7e8c97504ac77b8d148bf78291d3f2

## Thumbnail

fileset_id: 217239c0-d3c1-45c3-ae3b-29df9e170f06
filename: 2023_Koike_SiGe_TE_device_draft-TM-初期投稿.pdf