# Spin-orbit torque driven by interfacial chemistry in topological BiSb/NiFe bilayers with Ti insertion https://mdr.nims.go.jp/datasets/ab8cdf2f-989d-4c1d-83cb-35a3658ea11a ## Files - [ICMFS2024 abstract_2024-0229.pdf](https://mdr.nims.go.jp/filesets/0fced435-6228-4f34-add1-4eed19fcfbf4/download) ([Detail](https://mdr.nims.go.jp/filesets/0fced435-6228-4f34-add1-4eed19fcfbf4.md)) ## Id ab8cdf2f-989d-4c1d-83cb-35a3658ea11a ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-11-28T06:34:06.634250Z ## Updated at 2024-11-29T07:31:19.799656Z ## Published at 2024-11-29T07:31:19.871886Z ## Doi https://doi.org/10.48505/nims.5051 ## First published url ## Date published ## Recorded date published ## Resource type conference_poster ## Manuscript type na ## Collection ## Title - title: Spin-orbit torque driven by interfacial chemistry in topological BiSb/NiFe bilayers with Ti insertion title_type: original lang: en ## Description - description: "In this work, BiSb thin films with a NiFe ferromagnetic layer were prepared to explore the impact of Ti spacer insertion on SOT efficiency. Remarkably, the Ti spacer layer enhanced SOT efficiency, persisting after aging and annealing, offering insights into interfacial interdiffusion for improved spintronics applications.\r\nTwo samples, BiSb/NiFe and BiSb/Ti/NiFe, were compared under different conditions, i.e., as-deposited, room-temperature aged for 45 days, and annealed at 400 K for 1 h. After deposition of BiSb, RHEED patterns revealed semi-polycrystalline growth, with improved crystallinity observed after annealing. The AFM image displayed a remarkably flat surface with an average roughness of 0.7 nm for the as-deposited 8-nm-thick BiSb thin film. Thickness-dependent resistivity measurements for the BiSb thin films illustrated the emergence of topological surface states, with increased resistivity in thicker films. XRD spectra confirmed the existence of a robust (001)-texture of the BiSb thin films, particularly in films thicker than 8 nm. Subsequently, ST-FMR measurements demonstrated an enhanced SOT efficiency of 1.2, achieved in the sample with a Ti spacer layer, which is around 4 times higher than in the sample without the Ti layer. The enhancement of SOT efficiency could be attributed to protecting topological surface states and preventing interdiffusion due to the Ti insertion. Microstructural analysis from cross-sectional STEM indicated an improved crystallinity in the Ti-inserted sample after annealing. Elemental analysis revealed the role of Ti in suppressing interdiffusion and preserving topological properties, contributing to the substantial increase in the SOT efficiency." description_type: abstract lang: eng ## Creator - name: Talluri Manoj role: author organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials/Spintronics Group - name: Zhenchao Wen role: author orcid: https://orcid.org/0000-0001-7496-1339 organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials/Spintronics Group - name: Jun Uzuhashi role: author orcid: https://orcid.org/0000-0003-2023-8158 organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials/Administrative Office - name: Tadakatsu Ohkubo role: author orcid: https://orcid.org/0000-0003-3548-1951 organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials - name: Hiroaki Sukegawa role: author orcid: https://orcid.org/0000-0002-4034-7848 organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials/Spintronics Group - name: Chandrasekhar Murapaka role: author organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials/Spintronics Group - name: Brian York role: author organization: Western Digital Corporation - name: Xiaoyong Liu role: author organization: Western Digital Corporation - name: Quang Le role: author organization: Western Digital Corporation - name: Seiji Mitani role: author orcid: https://orcid.org/0000-0002-1348-0774 organization: National Institute for Materials Science department: Research Center for Magnetic and Spintronic Materials ## Contact agent ## Publisher ## Managing organization ## Keyword - subject: Spin-orbit torque, interfacial chemistry, topological BiSb schema: not_defined ## Rights - identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal ## Conference name: 25th International Colloquium on Magnetic Films and Surfaces (ICMFS2024) start_date: 2024-07-07 end_date: 2024-07-12 identifier: https://www.icmfs2024.it/ ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 0fced435-6228-4f34-add1-4eed19fcfbf4 filename: ICMFS2024 abstract_2024-0229.pdf content_type: application/pdf size: 121790 md5: 7ff65ee3c5ae417f305c8bf644576967 ## Thumbnail fileset_id: 0fced435-6228-4f34-add1-4eed19fcfbf4 filename: ICMFS2024 abstract_2024-0229.pdf