# Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

https://mdr.nims.go.jp/datasets/ab768a0e-41d0-4d86-8017-508b60e81b02

## File

- [Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf](https://mdr.nims.go.jp/filesets/98cf1a21-8c40-4f5d-8ad4-66ac2160c166/download) ([Detail](https://mdr.nims.go.jp/filesets/98cf1a21-8c40-4f5d-8ad4-66ac2160c166.md))

## Id

ab768a0e-41d0-4d86-8017-508b60e81b02

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-11T06:57:43.361562Z

## Updated at

2024-08-02T23:30:15.292849Z

## Published at

2024-08-02T23:30:15.681919Z

## Doi

https://doi.org/10.48505/nims.4619

## First published url

https://doi.org/10.1063/5.0216601

## Date published

2024-08-07

## Recorded date published

2024-8-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effect of sequential N ion implantation in the formation of a shallow Mg-implanted
    p-type GaN layer
  title_type: original
  lang: en

## Description

- description: 'An area selectable Mg doping via ion implantation (I/I) is essential
    to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation
    annealing forms considerable defects in the GaN, resulting in extremely low activation
    efficiency. The recent invention of ultra-high-pressure annealing (UHPA) has substantially
    improved the p-type activation efficiency, however, the UHPA causes an unexpected
    Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration
    in the GaN matrix than the Mg dose. In this study, the effect of a sequential
    N I/I for p-type Mg-implanted GaN was investigated by the correlative scanning
    transmission electron microscopy (STEM), atom probe tomography (APT), and cathodoluminescence
    (CL) analyses. APT results have revealed that the sequential N I/I can successfully
    maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm-3
    or more. Our investigation suggests that sequential N I/I is a promising technique
    to maintain the Mg concentration higher and improve the p-type activation efficiency. '
  description_type: abstract
  lang: eng

## Creator

- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  department: Research Center for Magnetic and Spintronic Materials/Administrative
    Office
  ror: https://ror.org/026v1ze26
- name: Jun Chen
  role: author
  orcid: https://orcid.org/0000-0003-4272-2653
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Defect Design Group
  ror: https://ror.org/026v1ze26
- name: Ryo Tanaka
  role: author
  organization: Fuji Electric Corporation
- name: Shinya Takashima
  role: author
  organization: Fuji Electric Corporation
- name: Masaharu Edo
  role: author
  organization: Fuji Electric Corporation
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  department: Research Center for Magnetic and Spintronic Materials
  ror: https://ror.org/026v1ze26
- name: Takashi Sekiguchi
  role: author
  organization: University of Tsukuba

## Contact agent



## Publisher

organization: American Institute of Physics

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined
- subject: cathodoluminescence
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu
    Ohkubo, Takashi Sekiguchi; Effect of sequential N ion implantation in the formation
    of a shallow Mg-implanted p-type GaN layer. J. Appl. Phys. 7 August 2024; 136
    (5): 055702. and may be found at https://doi.org/10.1063/5.0216601'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '10897550'
  volume: '136'
  issue: '5'
  article_number: '055702'

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## Chemical composition



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## Fileset

- id: 98cf1a21-8c40-4f5d-8ad4-66ac2160c166
  filename: Effect of sequential N ion implantation in the formation of a shallow
    Mg-implanted p-type GaN layer.pdf
  content_type: application/pdf
  size: 1691959
  md5: 9e4656c79485006bfaee3e3401f78747

## Thumbnail

fileset_id: 98cf1a21-8c40-4f5d-8ad4-66ac2160c166
filename: Effect of sequential N ion implantation in the formation of a shallow Mg-implanted
  p-type GaN layer.pdf