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説明:

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe2. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functionalized topological quantum devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Topological insulator, quantum tunneling, quantum spin Hall state

刊行年月日: 2022-10-27

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 13 issue. 1 6386

研究助成金:

• National Science Foundation 1936383

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-022-33643-9

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更新時刻: 2025-02-27 16:30:45 +0900

MDRでの公開時刻: 2025-02-27 16:30:45 +0900