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説明:

The realization of spin manipulation using electric fields is anticipated to be a promising route toward future spintronic devices with ultra-low driving power as well as zero standby power, such as voltage-controlled (VC)—magnetoresistive random access memory (MRAM). Among various methods, the VC magnetic anisotropy (VCMA) effect in magnetic tunnel junctions (MTJs) is regarded as a particularly effective approach for achieving electric-field-induced magnetization control. One of the most important technical challenges in VC-MRAM development is to achieve a large VCMA coefficient, which is essential for ensuring scalability and reliable information writing. This review discusses the fundamental aspects of the VCMA effect and outlines recent attempts to optimize material and device structures to improve the VCMA coefficient in both epitaxial and polycrystalline MTJs.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: spintronics

刊行年月日: 2026-02-20

出版者: IOP Publishing

掲載誌:

• Journal of Physics D: Applied Physics (ISSN: 00223727) vol. 59 issue. 7

研究助成金:

• Industrial Technology Development Organization (NEDO), Japan
• Japan Science and Technology Agency
• Foundation for Promotion of Material Science and Technology of Japan
• PRESTO JPMJPR23H6

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6181

公開URL: https://doi.org/10.1088/1361-6463/ae3f41

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更新時刻: 2026-02-19 16:30:08 +0900

MDRでの公開時刻: 2026-02-19 14:09:17 +0900