# Multifunctional in-memory logics based on a dual-gate antiambipolar transistor toward non-von Neumann computing architecture https://mdr.nims.go.jp/datasets/a8d5fe00-0598-40e9-b93e-2289f7d3c18d ## File - [Supporting infomation_240614_ACS_Appl_Mater_Interface.docx](https://mdr.nims.go.jp/filesets/b2812016-bfba-4501-b469-57867a5a0616/download) ([Detail](https://mdr.nims.go.jp/filesets/b2812016-bfba-4501-b469-57867a5a0616.md)) - [Manuscript_240623.docx](https://mdr.nims.go.jp/filesets/509a22d6-f220-4101-9333-fbf3dc2b6b85/download) ([Detail](https://mdr.nims.go.jp/filesets/509a22d6-f220-4101-9333-fbf3dc2b6b85.md)) ## Id a8d5fe00-0598-40e9-b93e-2289f7d3c18d ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-07-03T02:21:35.606505Z ## Updated at 2025-06-23T23:30:41.419701Z ## Published at 2025-06-23T23:20:45.845141Z ## Doi https://doi.org/10.48505/nims.4603 ## First published url http://doi.org/10.1021/acsami.4c06116 ## Date published 2024-07-03 ## Recorded date published 2024-7-3 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Multifunctional in-memory logics based on a dual-gate antiambipolar transistor toward non-von Neumann computing architecture title_type: original lang: en ## Description - description: In-memory computing may make it possible to realize non-von Neumann computing because the logic circuits are unified in the memory units. We investigated two types of in-memory logic operation, namely two-input logic circuits and multifunctional artificial synapses. These were realized in a dual-gate antiambipolar transistor (AAT) with an ReS2/WSe2 heterojunction, in which polystyrene with a zinc phthalocyanine core (ZnPc-PS4) was incorporated as a memory layer. First, we achieved electrically reconfigurable two-input logic circuits. Versatile logic circuits such as AND, OR, NAND, NOR, and XOR circuits were demonstrated by taking advantage of the Λ-shaped transfer curve of the dual-gate AAT. Importantly, the nonvolatile memory function provided the electrical switching of the individual circuits between AND/OR, NAND/NOR, and XOR/NAND circuits with constant input signals. Second, the memory effect was applied to multifunctional artificial synapses. These findings provide hints that may lead to the realization of new in-memory computing architectures beyond the current von Neumann computers. description_type: abstract lang: eng ## Creator - name: Yoshitaka Shingaya role: author orcid: https://orcid.org/0000-0002-5926-3302 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Neuromorphic Devices Group ror: https://ror.org/026v1ze26 - name: Takuya Iwasaki role: author orcid: https://orcid.org/0000-0002-1103-2433 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Qubit Materials Group ror: https://ror.org/026v1ze26 - name: Ryoma Hayakawa role: author orcid: https://orcid.org/0000-0002-1442-8230 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Quantum Device Engineering Group ror: https://ror.org/026v1ze26 - name: Shu Nakaharai role: author organization: National Institute for Materials Science department: International Center for Materials Nanoarchitectonics/Nano-System Field/Quantum Device Engineering Group ror: https://ror.org/026v1ze26 - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science department: Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group ror: https://ror.org/026v1ze26 - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA) ror: https://ror.org/026v1ze26 - name: Junko Aimi role: author orcid: https://orcid.org/0000-0003-1339-0581 organization: National Institute for Materials Science department: Research Center for Macromolecules and Biomaterials/Macromolecules Field/Molecular Mechatronics Group ror: https://ror.org/026v1ze26 - name: Yutaka Wakayama role: author orcid: https://orcid.org/0000-0002-0801-8884 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Quantum Device Engineering Group ror: https://ror.org/026v1ze26 ## Contact agent ## Publisher organization: American Chemical Society ## Managing organization ## Keyword - subject: 2D materials schema: not_defined - subject: antiambipolar transistor schema: not_defined - subject: in-memory logic schema: not_defined - subject: neuromorphic device schema: not_defined - subject: nano-floating gate schema: not_defined - subject: non-von Neumann computing schema: not_defined ## Rights - description: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.4c06116 identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2024-06-24 end_date: 2025-06-24 ## Journal - title: ACS Applied Materials & Interfaces issn: '19448252' volume: '16' issue: '26' ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: b2812016-bfba-4501-b469-57867a5a0616 filename: Supporting infomation_240614_ACS_Appl_Mater_Interface.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 2345867 md5: 67e2b0e4634e7fcac7819530d3d31575 - id: 509a22d6-f220-4101-9333-fbf3dc2b6b85 filename: Manuscript_240623.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 5255328 md5: a0627db14a59ce50aff37152dfc518ab ## Thumbnail fileset_id: 509a22d6-f220-4101-9333-fbf3dc2b6b85 filename: Manuscript_240623.docx