# Fabrication and characterization of single-crystalline CoSn(10-10) kagome metal thin  films for interconnect applications: structure and anisotropic electrical resistivity 

https://mdr.nims.go.jp/datasets/a8d2fa61-254a-4b8b-a935-9944c1e521fd

## File

- [CoSn_final_MDR.pdf](https://mdr.nims.go.jp/filesets/a18da200-07a8-49d7-a6cf-13463ec9999f/download) ([Detail](https://mdr.nims.go.jp/filesets/a18da200-07a8-49d7-a6cf-13463ec9999f.md))

## Id

a8d2fa61-254a-4b8b-a935-9944c1e521fd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-10T09:28:29.684723Z

## Updated at

2025-12-11T03:30:21.321059Z

## Published at

2025-12-11T03:24:34.460417Z

## Doi

https://doi.org/10.48505/nims.5993

## First published url

https://doi.org/10.1063/5.0298962

## Date published

2025-11-17

## Recorded date published

2025-11-17

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 'Fabrication and characterization of single-crystalline CoSn(10-10) kagome
    metal thin  films for interconnect applications: structure and anisotropic electrical
    resistivity '
  title_type: original
  lang: en

## Description

- description: "CoSn kagome metal is a pseudo-one-dimensional electronic conductor,
    exhibiting low \r\nresistivity (ρ) along the [0001] direction (c-axis) and significantly
    higher ρ along other \r\ncrystallographic directions. Such anisotropic conduction
    is expected to mitigate resistivity \r\nincreases in narrow interconnect wires
    at advanced semiconductor technology process nodes, \r\nmaking CoSn a promising
    candidate for future interconnect applications. In this study, CoSn \r\nthin films
    were fabricated by magnetron sputtering, and their resistivity anisotropy was
    \r\ninvestigated with respect to crystallographic orientation. Epitaxial growth
    of single-crystalline \r\nCoSn (101ത0) films was achieved on a Ru (101ത0) buffer
    layer at deposition temperatures above \r\n350 °C. The CoSn films exhibited relatively
    low ρ along [0001], reaching 13 µΩ cm for films \r\nthicker than 50 nm, and an
    approximately tenfold anisotropy of ρ between [0001] and [2-1-10]\r\n(a-axis),
    consistent with previous reports on bulk CoSn single crystals. However, the CoSn(10-10)
    surface exhibited pronounced roughness, attributed to three-dimensional crystal
    growth during sputtering, which hinders accurate evaluation of the thickness dependence
    of resistivity. Scanning transmission electron microscopy revealed the growth
    of a CoSn (10-10) single-crystal with (11-20) and (01-10) side wall facets, as
    well as domain boundaries within the films. These results highlight both the potential
    and challenges of employing CoSn kagome metal in future interconnect technologies. "
  description_type: abstract
  lang: eng

## Creator

- name: Tomoya Nakatani
  role: author
  orcid: https://orcid.org/0000-0001-9590-216X
  organization: National Institute for Materials Science
  department: Research Center for Magnetic and Spintronic Materials/Magnetic Functional
    Device Group
- name: Nattamon Suwannaharn
  role: author
  orcid: https://orcid.org/0000-0003-1285-599X
  organization: National Institute for Materials Science
  department: Research Center for Structural Materials/Materials Evaluation Field/Microstructure
    Analysis Group
- name: Taisuke T. Sasaki
  role: author
  orcid: https://orcid.org/0000-0002-5952-7638
  organization: National Institute for Materials Science
  department: Research Center for Structural Materials/Materials Evaluation Field/Microstructure
    Analysis Group

## Contact agent



## Publisher

organization: American Institute of Physics

## Managing organization



## Keyword

- subject: interconnect
  schema: not_defined
- subject: semiconductor
  schema: not_defined
- subject: kagome
  schema: not_defined
- subject: epitaxial
  schema: not_defined
- subject: resistivity
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Tomoya Nakatani, Nattamon Suwannaharn, Taisuke T. Sasaki; Fabrication and characterization
    of single-crystalline CoSn kagome metal thin films for interconnect applications:
    Structure and anisotropic electrical resistivity. Appl. Phys. Lett. 17 November
    2025; 127 (20): 203302 and may be found at https://doi.org/10.1063/5.0298962.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: APPLIED PHYSICS LETTERS
  issn: '00036951'
  volume: '127'
  issue: '20'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a18da200-07a8-49d7-a6cf-13463ec9999f
  filename: CoSn_final_MDR.pdf
  content_type: application/pdf
  size: 2464237
  md5: 5c2eb7def9466461d40a7bb2fcf41b4e

## Thumbnail

fileset_id: a18da200-07a8-49d7-a6cf-13463ec9999f
filename: CoSn_final_MDR.pdf