# Conductive single-phase SrMoO            <sub>3</sub>            epitaxial films synthesized in pure Ar ambience via plasma-assisted radio frequency sputtering

https://mdr.nims.go.jp/datasets/a8c3cd8a-c556-4c5c-bbef-18d9fdb75e81

## File

- [Roy-Chowdhury et al. - 2024 - Conductive single-phase SrMoO3 epitaxial films syn.pdf](https://mdr.nims.go.jp/filesets/9557e4cc-665f-435e-9378-ee5ba6018f5d/download) ([Detail](https://mdr.nims.go.jp/filesets/9557e4cc-665f-435e-9378-ee5ba6018f5d.md))

## Id

a8c3cd8a-c556-4c5c-bbef-18d9fdb75e81

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-10T00:37:06.035587Z

## Updated at

2024-09-10T23:30:16.065612Z

## Published at

2024-09-10T23:30:16.776870Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2024.2378684

## Date published

2024-12-31

## Recorded date published

2024-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Conductive single-phase SrMoO            <sub>3</sub>            epitaxial
    films synthesized in pure Ar ambience via plasma-assisted radio frequency sputtering
  title_type: original
  lang: en

## Description

- description: The cubic perovskite SrMoO3 with a paramagnetic ground state and remarkably
    low room-temperature resistivity has been considered as a suitable candidate for
    the new-era oxide-based technology. However, the difficulty of preparing single-phase
    SrMoO3 thin films by hydrogen-free sputtering has hindered their practical use,
    especially due to the formation of thermodynamically favorable SrMoO4 impurity.
    In this work, we developed a radio frequency sputtering technology enabling the
    reduction reaction and achieved conductive epitaxial SrMoO3 films with pure phase
    from a SrMoO4 target in a hydrogen-free, pure argon environment. We demonstrated
    the significance of controlling the target-to-substrate distance (TSD) on the
    synthesis of SrMoO3; the film resistivity drastically changes from 1.46 × 105
    μΩ·cm to 250 μΩ·cm by adjusting the TSD. Cross-sectional microstructural analyses
    demonstrated that films with the lowest resistivity, deposited for TSD = 2.5 cm,
    possess a single-phase SrMoO3 with an epitaxial perovskite structure. The formation
    mechanism of the conductive single-phase SrMoO3 films can be attributed to the
    plasma-assisted growth process by tuning the TSD. Temperature-dependent resistivity
    and Hall effect studies revealed metal-like conducting properties for low-resistive
    SrMoO3 films while the high-resistive ones displayed semiconductor-like behavior.
    Our approach makes hydrogen-free, reliable and cost-efficient scalable deposition
    of SrMoO3 films possible, which may open up promising prospects for a wide range
    of future applications of oxide materials.
  description_type: abstract
  lang: und

## Creator

- name: Mouli Roy-Chowdhury
  role: author
  orcid: https://orcid.org/0000-0001-9128-5563
- name: Cong He
  role: author
- name: Ke Tang
  role: author
- name: Hiroki Koizumi
  role: author
- name: Zhenchao Wen
  role: author
  orcid: https://orcid.org/0000-0001-7496-1339
- name: Subhash Thota
  role: author
- name: Hiroaki Sukegawa
  role: author
  orcid: https://orcid.org/0000-0002-4034-7848
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Seiji Mitani
  role: author
  orcid: https://orcid.org/0000-0002-1348-0774

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: plasma-assisted RF sputtering technology
  schema: not_defined
- subject: reduction reaction
  schema: not_defined
- subject: single-phase conductive SrMoO3 epitaxial films
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '25'
  issue: '1'

## Conference



## Related item



## Funding

- identifier: JPMJCR19J4
  funder_name: JST CREST

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 9557e4cc-665f-435e-9378-ee5ba6018f5d
  filename: Roy-Chowdhury et al. - 2024 - Conductive single-phase SrMoO3 epitaxial
    films syn.pdf
  content_type: application/pdf
  size: 8834493
  md5: 6899123fe78a502f27dc89892ebb43ef

## Thumbnail

fileset_id: 9557e4cc-665f-435e-9378-ee5ba6018f5d
filename: Roy-Chowdhury et al. - 2024 - Conductive single-phase SrMoO3 epitaxial films
  syn.pdf