# Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe<sub>3</sub>O<sub>4</sub> and Li-ion electrolyte thin films for physical reservoir computing

https://mdr.nims.go.jp/datasets/a82332ce-b216-4050-a7dc-c44b1dba3659

## File

- [20231130_JJAP_manuscript_namiki et al.pdf](https://mdr.nims.go.jp/filesets/36a4e53c-63cc-4404-911f-504f3a9e27a3/download) ([Detail](https://mdr.nims.go.jp/filesets/36a4e53c-63cc-4404-911f-504f3a9e27a3.md))

## Id

a82332ce-b216-4050-a7dc-c44b1dba3659

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-02T16:35:03.674877Z

## Updated at

2024-08-05T03:30:36.359285Z

## Published at

2024-08-05T03:30:36.433297Z

## Doi

https://doi.org/10.48505/nims.4621

## First published url

https://doi.org/10.35848/1347-4065/ad1fb0

## Date published

2024-03-01

## Recorded date published

2024-3-1

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Asymmetric transition of electrical resistance in an all-solid-state redox
    device with Fe<sub>3</sub>O<sub>4</sub> and Li-ion electrolyte thin films for
    physical reservoir computing
  title_type: original
  lang: en

## Description

- description: In recent years, ion-gating devices have been used in artificial neuromorphic
    computing and achieved high performance for time-series data processing. However,
    the origin of such performance still needs to be clarified. In this study, we
    fabricated an all-solid-state redox device with functional material Fe3O4 and
    Li-ion conducting solid electrolytes, and the transient response of the electrical
    resistance of the Fe3O4 thin film to time-series data input was investigated.
    The transition between high and low electrical resistance states was asymmetry,
    and residual Li-ion in the thin film led to a hysteresis effect. These unique
    features, which is induced by ion-electron dynamics coupling, contributes to the
    high performance of physical reservoir computing utilizing ion-gating device.
  description_type: abstract
  lang: und

## Creator

- name: Wataru Namiki
  role: author
  orcid: https://orcid.org/0000-0003-4053-7366
  organization: National Institute for Materials Science
- name: Takashi Tsuchiya
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
  organization: National Institute for Materials Science
- name: Daiki Nishioka
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
  organization: National Institute for Materials Science
- name: Tohru Higuchi
  role: author
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Reservoir computing
  schema: not_defined
- subject: Fe3O4
  schema: not_defined
- subject: Redox device
  schema: not_defined

## Rights

- description: This is the version of the article before peer review or editing, as
    submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing
    Ltd is not responsible for any errors or omissions in this version of the manuscript
    or any version derived from it.  The Version of Record is available online at
    https://dx.doi.org/10.35848/1347-4065/ad1fb0
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '63'
  issue: '3'
  article_number: 03SP13

## Conference



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 36a4e53c-63cc-4404-911f-504f3a9e27a3
  filename: 20231130_JJAP_manuscript_namiki et al.pdf
  content_type: application/pdf
  size: 3436832
  md5: 5fa518d86e38e7cee9d98bb754570e0a

## Thumbnail

fileset_id: 36a4e53c-63cc-4404-911f-504f3a9e27a3
filename: 20231130_JJAP_manuscript_namiki et al.pdf