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説明:

In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of such performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetry, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which is induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing ion-gating device.

権利情報:

• In Copyright
  

  This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ad1fb0

キーワード: Reservoir computing, Fe3O4, Redox device

刊行年月日: 2024-03-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 63 issue. 3 03SP13

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4621

公開URL: https://doi.org/10.35848/1347-4065/ad1fb0

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更新時刻: 2024-08-05 12:30:36 +0900

MDRでの公開時刻: 2024-08-05 12:30:36 +0900