Download file (3.28 MB)
Download as zip (3.06 MB)

Collection

Citation

Description:

In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of such performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetry, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which is induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing ion-gating device.

Rights:

• In Copyright
  This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ad1fb0

Keyword: Reservoir computing, Fe3O4, Redox device

Date published: 2024-03-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 63 issue. 3 03SP13

Funding:

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4621

First published URL: https://doi.org/10.35848/1347-4065/ad1fb0

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-08-05 12:30:36 +0900

Published on MDR: 2024-08-05 12:30:36 +0900