# Diamond CMOS technology

https://mdr.nims.go.jp/datasets/a7bc2e61-4c2a-4f36-a358-2ccb464e2e89

## File

- [NDNC2025_abstract_Liao_CMOS.pdf](https://mdr.nims.go.jp/filesets/974609fb-991f-4e96-86e8-ac453e6453dc/download) ([Detail](https://mdr.nims.go.jp/filesets/974609fb-991f-4e96-86e8-ac453e6453dc.md))

## Id

a7bc2e61-4c2a-4f36-a358-2ccb464e2e89

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-05-17T02:22:56.073004Z

## Updated at

2025-05-21T23:30:34.751803Z

## Published at

2025-05-21T23:23:08.967924Z

## Doi

https://doi.org/10.48505/nims.5493

## First published url



## Date published



## Recorded date published



## Resource type

conference_presentation

## Manuscript type

na

## Collection



## Title

- title: Diamond CMOS technology
  title_type: original
  lang: en

## Description

- description: The current silicon complementary metal-oxide-semiconductor (CMOS)
    technology has been facing bottlenecks in the conditions of high-power density,
    high frequency, high temperature, and strong radiation. Diamond CMOS has long
    been pursued to achieve performances beyond the capability of conventional silicon
    electronics. By using diamond electronics, not only can the thermal management
    demands for conventional semiconductors be alleviated but these devices are also
    more energy efficient and can endure much higher breakdown voltages and harsh
    environments. On the other hand, with the development of diamond growth technologies,
    power electronics, spintronics, and microelectromechanical system (MEMS) sensors
    operatable under high-temperature and strong-radiation conditions, the demand
    for peripheral circuitry based on diamond CMOS devices has increased for monolithic
    integration.
  description_type: abstract
  lang: eng

## Creator

- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Wen Zhao
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group

## Contact agent



## Publisher



## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: n-type
  schema: not_defined
- subject: transistor
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal



## Conference

name: The 18th International Conference on New Diamond and Nano Carbons
start_date: 2025-05-11
end_date: 2025-05-15
identifier: https://ndnc2025.org/index.html

## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 974609fb-991f-4e96-86e8-ac453e6453dc
  filename: NDNC2025_abstract_Liao_CMOS.pdf
  content_type: application/pdf
  size: 274312
  md5: 8cf4bdc9c0066b655511652c1244f1c1

## Thumbnail

fileset_id: 974609fb-991f-4e96-86e8-ac453e6453dc
filename: NDNC2025_abstract_Liao_CMOS.pdf