# Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate

https://mdr.nims.go.jp/datasets/a57dc597-9d11-4364-9242-d42d82b48553

## File

- [2025A01135G_87948_3_merged_1738752664.pdf](https://mdr.nims.go.jp/filesets/617cbde1-8169-4f72-a5c0-9d50911ccc38/download) ([Detail](https://mdr.nims.go.jp/filesets/617cbde1-8169-4f72-a5c0-9d50911ccc38.md))

## Id

a57dc597-9d11-4364-9242-d42d82b48553

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-31T05:29:28.421060Z

## Updated at

2026-08-31T05:53:07.457913Z

## Published at

2026-08-31T07:27:56.538743Z

## Doi



## First published url

https://doi.org/10.1038/s41563-025-02173-2

## Date published

2025-03-19

## Recorded date published

2025-6

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate
  title_type: original
  lang: en

## Description

- description: The stacking sequence of two-dimensional hexagonal boron nitride (hBN)
    is a critical factor that determines its polytypes and its distinct physical properties.
    Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence,
    achieving alternative stacking configurations has remained a long-standing challenge.
    Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking,
    where atomic monolayers align along the c axis without any translation or rotation.
    This previously considered thermodynamically unfavourable hBN polytype is achieved
    through epitaxial growth on a two-inch single-crystalline gallium nitride wafer,
    using a metal–organic chemical vapour deposition technique. Comprehensive structural
    and optical characterizations, complemented by theoretical modelling, evidence
    the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the
    vicinal gallium nitride surface drives the unidirectional alignment of layers.
    Here electron doping plays a central role in stabilizing the AA stacking configuration.
    Our findings provide further insights into the scalable synthesis of engineered
    hBN polytypes, characterized by unique properties such as large optical nonlinearity.
  description_type: abstract
  lang: en

## Creator

- name: Seokho Moon
  role: author
- name: Odongo Francis Ngome Okello
  role: author
- name: Adrien Rousseau
  role: author
- name: Chang-Won Choi
  role: author
- name: Youngjae Kim
  role: author
- name: Yunjae Park
  role: author
- name: Jiye Kim
  role: author
- name: Jaewon Kim
  role: author
- name: Minhyuk Kim
  role: author
- name: Pierre Valvin
  role: author
- name: Jaehee Cho
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Hu Young Jeong
  role: author
- name: Giorgia Fugallo
  role: author
- name: Wilfried Desrat
  role: author
- name: Feng Ding
  role: author
- name: JaeDong Lee
  role: author
- name: Bernard Gil
  role: author
- name: Guillaume Cassabois
  role: author
- name: Si-Young Choi
  role: author
- name: Jong Kyu Kim
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Hexagonal boron nitride (hBN)
  schema: not_defined
- subject: Stacking sequence (polytype)
  schema: not_defined
- subject: Metal-organic chemical vapor deposition (MOCVD)
  schema: not_defined

## Rights

- description: 'This version of the article has been accepted for publication, after
    peer review (when applicable) and is subject to Springer Nature’s AM terms of
    use, but is not the Version of Record and does not reflect post-acceptance improvements,
    or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41563-025-02173-2'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-03-19
end_date: 2025-09-19

## Journal

- title: Nature Materials
  issn: '14764660'
  volume: '24'
  issue: '6'
  start_page: 843
  end_page: 851

## Conference



## Related item



## Funding

- identifier: NRF-2021M3C1C3097673
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00344690
  funder_name: National Research Foundation of Korea
- identifier: RS-2022-NR068223
  funder_name: National Research Foundation of Korea
- identifier: NRF-2021M3C1C3097673
  funder_name: National Research Foundation of Korea
- identifier: 2018H1A2A1060392
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00344690
  funder_name: National Research Foundation of Korea
- identifier: RS-2022-NR068223
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00355591
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00355591
  funder_name: National Research Foundation of Korea
- identifier: '20016290'
  funder_name: Ministry of Trade, Industry and Energy
- identifier: '20016290'
  funder_name: Ministry of Trade, Industry and Energy
- identifier: 25YH1100
  funder_name: Electronics and Telecommunications Research Institute
- identifier: 25YH1100
  funder_name: Electronics and Telecommunications Research Institute
- identifier: SRFC-MA1401-10
  funder_name: Samsung
- identifier: IO201215-08185-01
  funder_name: Samsung
- identifier: SRFC-MA1401-10
  funder_name: Samsung
- identifier: IO201215-08185-01
  funder_name: Samsung
- identifier: SRFC-MA1401-10
  funder_name: Samsung
- identifier: IO201215-08185-01
  funder_name: Samsung
- identifier: SRFC-MA1401-10
  funder_name: Samsung
- identifier: IO201215-08185-01
  funder_name: Samsung
- identifier: 2020R1A6C101A202
  funder_name: Korea Basic Science Institute
- identifier: 2020R1A6C101A202
  funder_name: Korea Basic Science Institute
- identifier: 2020R1A6C101A202
  funder_name: Korea Basic Science Institute

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

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  filename: 2025A01135G_87948_3_merged_1738752664.pdf
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## Thumbnail

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filename: 2025A01135G_87948_3_merged_1738752664.pdf