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説明:

The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.

権利情報:

• In Copyright
  

  This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41563-025-02173-2

キーワード: Hexagonal boron nitride (hBN), Stacking sequence (polytype), Metal-organic chemical vapor deposition (MOCVD)

刊行年月日: 2025-03-19

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Materials (ISSN: 14764660) vol. 24 issue. 6 p. 843-851

研究助成金:

• National Research Foundation of Korea NRF-2021M3C1C3097673
• National Research Foundation of Korea RS-2024-00344690
• National Research Foundation of Korea RS-2022-NR068223
• National Research Foundation of Korea NRF-2021M3C1C3097673
• National Research Foundation of Korea 2018H1A2A1060392
• National Research Foundation of Korea RS-2024-00344690
• National Research Foundation of Korea RS-2022-NR068223
• National Research Foundation of Korea RS-2024-00355591
• National Research Foundation of Korea RS-2024-00355591
• Ministry of Trade, Industry and Energy 20016290
• Ministry of Trade, Industry and Energy 20016290
• Electronics and Telecommunications Research Institute 25YH1100
• Electronics and Telecommunications Research Institute 25YH1100
• Samsung SRFC-MA1401-10
• Samsung IO201215-08185-01
• Samsung SRFC-MA1401-10
• Samsung IO201215-08185-01
• Samsung SRFC-MA1401-10
• Samsung IO201215-08185-01
• Samsung SRFC-MA1401-10
• Samsung IO201215-08185-01
• Korea Basic Science Institute 2020R1A6C101A202
• Korea Basic Science Institute 2020R1A6C101A202
• Korea Basic Science Institute 2020R1A6C101A202

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1038/s41563-025-02173-2

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更新時刻: 2026-08-31 14:53:07 +0900

MDRでの公開時刻: 2026-08-31 16:27:56 +0900