# Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>

https://mdr.nims.go.jp/datasets/a5782ca1-dfa8-4215-afd3-567d12925052

## File

- [Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along .pdf](https://mdr.nims.go.jp/filesets/37e89325-de02-4c2a-a8b9-563880604614/download) ([Detail](https://mdr.nims.go.jp/filesets/37e89325-de02-4c2a-a8b9-563880604614.md))

## Id

a5782ca1-dfa8-4215-afd3-567d12925052

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:51:46.819298Z

## Updated at

2024-01-30T07:49:49.690107Z

## Published at

2024-01-30T23:30:17.076259Z

## Doi



## First published url

https://doi.org/10.1063/5.0068097

## Date published

2021-11-07

## Recorded date published

2021-11-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "<-12-10>ストライプマスクを用いたr面α-Ga2O3の選択横方向成長"
  title_type: alternative
  lang: ja
- title: Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
  title_type: original
  lang: en

## Description

- description: "We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane)
    α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 stripes with an asymmetric
    cross-sectional shape were formed selectively on the windows at the initial growth
    stage. They grew vertically and laterally to coalesce with each other, and a compact
    film was achieved. The film surface exhibited wave-like morphology with macro-scale
    inclined terraces and steps because of the asymmetric cross-sectional stripe shape.
    Transmission electron microscopy revealed that a domain originated from a window
    grew toward the inclined c-axis direction so as to cover the adjacent domain after
    the coalescence. As a result, the dislocations which propagated into the α-Ga2O3
    stripe from the seed layer through the window did not reach the top surface because
    they were buried by the overgrowth of the adjacent domain. \r\n\r\n"
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Shingo Yagyu
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: ELO
  schema: not_defined

## Rights

- description: This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yuichi Oshima et al., J. Appl. Phys. 130, 175304 (2021) and may be found at
    https://doi.org/10.1063/5.0068097.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '130'
  issue: '17'
  start_page: 175304
  end_page: 175304

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 37e89325-de02-4c2a-a8b9-563880604614
  filename: Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along
    .pdf
  content_type: application/pdf
  size: 3267055
  md5: 1fe79da68cd36c18e9a87d6513e23c57

## Thumbnail

fileset_id: 37e89325-de02-4c2a-a8b9-563880604614
filename: Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along
  .pdf