# Validity of the constant relaxation time approximation in topological insulator: Sn-BSTS a case study

https://mdr.nims.go.jp/datasets/a576f2cd-7d1e-484e-af55-b7935046f99b

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## Id

a576f2cd-7d1e-484e-af55-b7935046f99b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-11T06:53:27.430825Z

## Updated at

2024-09-12T07:30:40.444726Z

## Published at

2024-09-12T07:30:40.553429Z

## Doi

https://doi.org/10.48505/nims.4742

## First published url

https://doi.org/10.1063/5.0215841

## Date published

2024-08-19

## Recorded date published

2024-8-19

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 'Validity of the constant relaxation time approximation in topological insulator:
    Sn-BSTS a case study'
  title_type: original
  lang: en

## Description

- description: Gate-voltage dependent quantum oscillations in topological insulator
    Sn0.02 Bi 1.08Sb 0.9 Te 2 S (Sn-BSTS) are analyzed on the basis of the Lifshitz-Kosevich
    theory. The angular dependence of the quantum oscillations and Landau-level fan
    diagram analysis show that the quantum oscillations originate from topological
    surface states with the Berry phase of \pi. Gate-voltage control allows precise
    control of the Fermi energy, and a very weak energy dependence of the relaxation
    time s of the topological surface states is revealed. By a simple algebraic argument
    using the linear response theory, it is shown that the weak energy dependence
    of s validates the constant relaxation time approximation [τ(Ε,Τ)
    =τ 0 ] in the calculation of the Seebeck coefficient S and zT_el.
  description_type: abstract
  lang: und

## Creator

- name: Yuya Hattori
  role: author
  orcid: https://orcid.org/0000-0002-3805-4659
  organization: National Institute for Materials Science
- name: Takako Konoike
  role: author
  orcid: https://orcid.org/0000-0002-6037-5782
  organization: National Institute for Materials Science
- name: Shinya Uji
  role: author
  orcid: https://orcid.org/0000-0001-9351-6388
  organization: National Institute for Materials Science
- name: Yuki Tokumoto
  role: author
  orcid: https://orcid.org/0000-0003-4518-1979
- name: Keiichi Edagawa
  role: author
  orcid: https://orcid.org/0000-0001-8370-2005
- name: Taichi Terashima
  role: author
  orcid: https://orcid.org/0000-0001-9239-0621
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: トポロジカル絶縁体
  schema: not_defined
- subject: 熱電材料
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yuya Hattori, Takako Konoike, Shinya Uji, Yuki Tokumoto, Keiichi Edagawa, Taichi
    Terashima; Validity of the constant relaxation time approximation in topological
    insulator: Sn-BSTS a case study. Appl. Phys. Lett. 19 August 2024; 125 (8): 083102
    and may be found at https://doi.org/10.1063/5.0215841.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '125'
  issue: '8'
  article_number: '083102'

## Conference



## Related item



## Funding

- identifier: JP21K20496
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22K14467
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H01765
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H01173
  funder_name: Japan Society for the Promotion of Science

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## Fileset

- id: cf1b441c-03f5-435c-832e-d97919b74763
  filename: clear_maintext20240805.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1324808
  md5: 13e229bd8b117cdf767f53428e548af2

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