# Quasi-1D edge contact to hBN-encapsulated multilayered graphene by SF6 dry etch

https://mdr.nims.go.jp/datasets/a52c97ab-00f5-4f39-80ec-2c61d702fac2

## File

- [2025A01181G_Manuscript Final.docx](https://mdr.nims.go.jp/filesets/145e3958-9683-4836-b4cc-65777c36b8f5/download) ([Detail](https://mdr.nims.go.jp/filesets/145e3958-9683-4836-b4cc-65777c36b8f5.md))

## Id

a52c97ab-00f5-4f39-80ec-2c61d702fac2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-30T04:07:55.330401Z

## Updated at

2026-07-03T04:07:31.454332Z

## Published at

2026-07-03T05:29:37.483901Z

## Doi



## First published url

https://doi.org/10.1557/s43580-025-01276-x

## Date published

2025-05-13

## Recorded date published

2025-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Quasi-1D edge contact to hBN-encapsulated multilayered graphene by SF6 dry
    etch
  title_type: original
  lang: en

## Description

- description: We investigate the contact resistance of twisted bilayer graphene devices
    encapsulated by hexagonal boron nitride (hBN). Encapsulation ensures an atomically
    flat interface that supports emerging new states in twistronics, but it also necessitates
    an etch step to expose the graphene for electrical contacts. The dry-etch process
    by sulfur hexafluoride (SF6) etches hBN but stops on graphene. In our case, graphene
    only serves as an imperfect etch mask, resulting in a porous structure in graphene
    after the SF6 etch, possibly due to inadvertent residual oxygen during the etch
    process. We investigate electrical contacts to graphene surfaces exposed by this
    process. Etched pores expose edges which participate in the contact, which combined
    with fluorination of the graphene surface, provide variables for optimizing contact
    resistance.
  description_type: abstract
  lang: en

## Creator

- name: Ryuichi Tsuchikawa
  role: author
- name: David Castro
  role: author
- name: Swastik Ballav
  role: author
- name: Michael S. Lodge
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Masa Ishigami
  role: author
- name: Robert E. Peale
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Twisted bilayer graphene
  schema: not_defined
- subject: Contact resistance
  schema: not_defined
- subject: Hexagonal boron nitride
  schema: not_defined

## Rights

- description: 'This version of the article has been accepted for publication, after
    peer review (when applicable) and is subject to Springer Nature’s AM terms of
    use, but is not the Version of Record and does not reflect post-acceptance improvements,
    or any corrections. The Version of Record is available online at: https://doi.org/10.1557/s43580-025-01276-x.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-05-13
end_date: 2026-05-13

## Journal

- title: MRS Advances
  issn: '27315894'
  volume: '10'
  issue: '10'
  start_page: 1271
  end_page: 1276

## Conference



## Related item



## Funding

- identifier: W911NF-23-C-0027
  funder_name: Small Business Innovative Research and Small Business Technology Transfer
- funder_name: Florida High Tech Corridor Council

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## Fileset

- id: 145e3958-9683-4836-b4cc-65777c36b8f5
  filename: 2025A01181G_Manuscript Final.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 5786913
  md5: 1accf908f537a76c1cc0dde63320e4c0

## Thumbnail

fileset_id: 145e3958-9683-4836-b4cc-65777c36b8f5
filename: 2025A01181G_Manuscript Final.docx