Maheera Abdul Ghani
;
Soumya Sarkar
;
Yang Li
;
Ye Wang
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Yan Wang
;
Manish Chhowalla
説明:
(abstract)Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP2S6 (CIPS) has been integrated with graphene and other 2D materials to realize potentially novel low energy electronic devices. However, the influence of 2D CIPS on the properties of graphene and doping across the vdW interface has not been studied in detail. Here, we study graphene field effect transistors (FETs) with CIPS as the top gate. We find that CIPS leads to modulation of the graphene Fermi level due to local doping. We also find polarization-induced hysteresis in CIPS-gated graphene FETs. Electrical transport measurements from 50 to300 K show that above 200 K, the ferroelectric response decreases. As a result, the hysteresis voltage windows in the graphene ferroelectric FETs (FeFET) transfer curves decrease above 200 K. Our results show that interfacial remote doping affects the macroscopic polarization and performance of CIPS-based graphene FeFETs.
権利情報:
キーワード: ferroelectric field effect transistor (FeFET) , CuInP2S6 (CIPS) , graphene heterostructures
刊行年月日: 2024-08-21
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1557/s43581-024-00109-y
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-02-14 22:35:55 +0900
MDRでの公開時刻: 2026-02-10 18:03:06 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
s43581-024-00109-y.pdf
(サムネイル)
application/pdf |
サイズ | 2.52MB | 詳細 |