# Doped interlayers enabling high-mobility p-type organic transistors with copper contact electrodes

https://mdr.nims.go.jp/datasets/a3f5f995-343e-49af-bc07-342e94f96a6a

## File

- [main-clean.pdf](https://mdr.nims.go.jp/filesets/8e58d994-b2a5-4a4a-9e48-192ab2900eff/download) ([Detail](https://mdr.nims.go.jp/filesets/8e58d994-b2a5-4a4a-9e48-192ab2900eff.md))

## Id

a3f5f995-343e-49af-bc07-342e94f96a6a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-17T07:20:25.230305Z

## Updated at

2026-04-30T03:01:11.491392Z

## Published at

2026-07-29T23:29:16.397817Z

## Doi

https://doi.org/10.48505/nims.5913

## First published url

https://doi.org/10.1039/d5tc01775k

## Date published

2025-07-30

## Recorded date published

2025-8-28

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Doped interlayers enabling high-mobility p-type organic transistors with
    copper contact electrodes
  title_type: original
  lang: en

## Description

- description: Thin-film single crystals of organic semiconductors (OSCs) enable simple
    and low-cost fabrication of high-mobility organic field-effect transistors (OFETs)
    via solution processing. However, injection barriers in OFETs limit material selection
    and device performance. Researchers typically use high-work-function noble metals
    as contact electrodes for p-type OFETs owing to transport levels well below −5.0
    eV for ambient stable OSCs. This raises questions regarding the economic and environmental
    advantages of OSC based printed electronics. This study demonstrates high-mobility
    OFETs with copper contact electrodes using doped interlayers. A poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]
    (PTAA) interlayer was laminated on the OSC single crystals. The PTAA interlayer
    was chemically doped using aqueous doping solutions, followed by evaporation of
    copper contact electrodes. Our OFET showed a proper p-type operation with a mobility
    of 5.0 cm2V−1 s−1 and onoff ratio of approximately 104. This is in contrast to
    the case without the doped interlayer showing poor performance and a low mobility
    of 0.2 cm2V−1 s−1. This study provides new opportunities for designing devices
    with a high performance, low cost, and material sustainability.
  description_type: abstract
  lang: und

## Creator

- name: Aoi Morimoto
  role: author
- name: Yu Yamashita
  role: author
  orcid: https://orcid.org/0000-0001-7966-3197
  organization: National Institute for Materials Science
- name: Taiki Sawada
  role: author
- name: Masaki Ishii
  role: author
- name: Shun Watanabe
  role: author
- name: Jun Takeya
  role: author
  orcid: https://orcid.org/0000-0002-7003-1350
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Royal Society of Chemistry (RSC)

## Managing organization



## Keyword

- subject: organic semiconductor
  schema: not_defined
- subject: doping
  schema: not_defined
- subject: transistor
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-07-30
end_date: 2026-07-30

## Journal

- title: Journal of Materials Chemistry C
  issn: '20507526'
  volume: '13'
  issue: '34'
  start_page: 17544
  end_page: 17550

## Conference



## Related item



## Funding

- identifier: JPMJFR236R
  funder_name: Fusion Oriented REsearch for disruptive Science and Technology
- identifier: JP22H04959
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K23428
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJCR21O3
  funder_name: Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 8e58d994-b2a5-4a4a-9e48-192ab2900eff
  filename: main-clean.pdf
  content_type: application/pdf
  size: 996655
  md5: dd566c3145ddc175ce7d709e48286de0

## Thumbnail

fileset_id: 8e58d994-b2a5-4a4a-9e48-192ab2900eff
filename: main-clean.pdf