Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene

Ryuta Yagi; Taiki Hirahara; Ryoya Ebisuoka; Tomoaki Nakasuga; Shingo Tajima; Kenji Watanabe; Takashi Taniguchi

doi:10.1038/s41598-018-31291-y

論文 Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene

Ryuta Yagi (Hiroshima University) ; Taiki Hirahara (Hiroshima University) ; Ryoya Ebisuoka (Hiroshima University) ; Tomoaki Nakasuga (Hiroshima University) ; Shingo Tajima (Hiroshima University) ; Kenji Watanabe (Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials Science) ; Takashi Taniguchi (Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials Science)

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Ryuta Yagi, Taiki Hirahara, Ryoya Ebisuoka, Tomoaki Nakasuga, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi. Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene. SCIENTIFIC REPORTS. 2018, 8 (1), . https://doi.org/10.1038/s41598-018-31291-y

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(abstract)

We show systematic variation in the band structure of high mobility graphene with one to seven layers by measuring quantum oscillation of magnetoresistance. The Landau fan diagram showed distinct structures that reflected differences in the band structure, as if they were finger prints of multilayer graphene. In particular, an even-odd layer number effect was clearly observed, in that the number of bands increased by one for every two layers, and a Dirac cone was observed only for odd number of layers. The electronic structure is significantly influenced by the potential energy arising from carrier screening associated with gate electric field.

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