# Tailoring the film morphology and interface band offset of caesium bismuth iodide-based Pb-free perovskite solar cells

https://mdr.nims.go.jp/datasets/a3650226-0ae2-4b01-bad4-50e42083e341

## File

- [JMCC-Authors Accepted Version.pdf](https://mdr.nims.go.jp/filesets/525a84f9-33a2-440c-a3b0-363339f868c4/download) ([Detail](https://mdr.nims.go.jp/filesets/525a84f9-33a2-440c-a3b0-363339f868c4.md))

## Id

a3650226-0ae2-4b01-bad4-50e42083e341

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-27T00:54:43.332434Z

## Updated at

2024-12-10T07:55:58.008897Z

## Published at

2024-12-10T07:55:58.324088Z

## Doi

https://doi.org/10.48505/nims.5127

## First published url

https://doi.org/10.1039/c9tc02181g

## Date published

2019-06-06

## Recorded date published

2019-7-11

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Tailoring the film morphology and interface band offset of caesium bismuth
    iodide-based Pb-free perovskite solar cells
  title_type: original
  lang: en

## Description

- description: Bismuth-based halide perovskites (Bi-HaP) are low toxicity and air-stable
    materials with promising photo-absorber properties. In this study, we fabricated
    Bi-HaP (Cs3Bi2I9 and CsBi3I10) films by a solution process followed by solvent
    annealing and investigated the crystal growth and optoelectronic properties of
    these materials. A compact and large grain morphology of the Bi-HaP films was
    realized by annealing under ambient solvent vapor conditions. Collective analysis
    of XRD patterns, and Raman spectra, absorption and PL spectra of the fabricated
    films corroborates that the Cs3Bi2I9 film (Eg ∼ 2.08 eV) with a hexagonal crystal
    phase is more stable under annealing conditions in a wide temperature range and
    ambient solvent vapor annealing conditions as compared to the other CsBi3I10 thin
    film, having the narrower Eg ∼ 1.8 eV, of the Bi-HaP family. We have achieved
    the best power conversion efficiency as high as ∼1.26% with the open circuit voltage
    of 0.74 V for the device fabricated with Cs3Bi2I9. The analysis of material properties
    and device characteristics indicates that morphology tailoring, surface chemistry
    control, and interface band offset engineering are important for the further improvement
    of Bi-HaP-based devices.
  description_type: abstract
  lang: und

## Creator

- name: Dhruba B. Khadka
  role: author
  orcid: https://orcid.org/0000-0001-9134-3890
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yasuhiro Shirai
  role: author
  orcid: https://orcid.org/0000-0003-2164-5468
  organization: National Institute for Materials Science
- name: Masatoshi Yanagida
  role: author
  orcid: https://orcid.org/0000-0002-8065-7875
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenjiro Miyano
  role: author
  orcid: https://orcid.org/0000-0002-5869-3087
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Royal Society of Chemistry (RSC)

## Managing organization



## Keyword

- subject: Pb free
  schema: not_defined
- subject: Crystallinity
  schema: not_defined
- subject: Interface
  schema: not_defined
- subject: Bi based perovskite
  schema: not_defined
- subject: Optoelectronic properties
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Materials Chemistry C
  issn: '20507526'
  volume: '7'
  issue: '27'
  start_page: 8335
  end_page: 8343

## Conference



## Related item



## Funding

- identifier: JP16K06285
  funder_name: Japan Society for the Promotion of Science
- funder_name: National Institute for Materials Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 525a84f9-33a2-440c-a3b0-363339f868c4
  filename: JMCC-Authors Accepted Version.pdf
  content_type: application/pdf
  size: 1460034
  md5: 1ca72157bd623c0362f5ab03e763bbd1

## Thumbnail

fileset_id: 525a84f9-33a2-440c-a3b0-363339f868c4
filename: JMCC-Authors Accepted Version.pdf