Achim Woessner
;
Pablo Alonso-González
;
Mark B. Lundeberg
;
Yuanda Gao
;
Jose E. Barrios-Vargas
;
Gabriele Navickaite
;
Qiong Ma
;
Davide Janner
;
Kenji Watanabe
(National Institute for Materials Science)
;
Aron W. Cummings
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Valerio Pruneri
;
Stephan Roche
;
Pablo Jarillo-Herrero
;
James Hone
;
Rainer Hillenbrand
;
Frank H. L. Koppens
Description:
(abstract)We present and apply a new type of opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties.
Rights:
Keyword: Optoelectronic devices, graphene, nanoscale variations
Date published: 2016-02-26
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/ncomms10783
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Updated at: 2025-02-27 12:30:51 +0900
Published on MDR: 2025-02-27 12:30:51 +0900
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