# Plasma treatment of MoS<sub>2</sub> field-effect transistors using solid-state fluorine source

https://mdr.nims.go.jp/datasets/a1d18194-5004-4b8a-b31d-ece635841009

## File

- [Kii_2025_Nano_Ex._6_025008.pdf](https://mdr.nims.go.jp/filesets/d0bb450a-22b2-4b9c-8379-fb43d4ae49d2/download) ([Detail](https://mdr.nims.go.jp/filesets/d0bb450a-22b2-4b9c-8379-fb43d4ae49d2.md))

## Id

a1d18194-5004-4b8a-b31d-ece635841009

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-01-19T08:25:38.235138Z

## Updated at

2026-01-20T00:55:23.779922Z

## Published at

2026-01-20T03:23:01.864194Z

## Doi



## First published url

https://doi.org/10.1088/2632-959x/addadb

## Date published

2025-06-30

## Recorded date published

2025-6-30

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Plasma treatment of MoS<sub>2</sub> field-effect transistors using solid-state
    fluorine source
  title_type: original
  lang: en

## Description

- description: Plasma treatment using a solid-state fluorine (F) source canmitigate
    the emission of F-containing gases into the environment. In this study,we investigated
    the processability of Ar-plasma-mediated F treatment using a polytetrafluoroethylene
    (PTFE) sheet as the F source. Surface treatment of two-dimensional (2D) semiconductor
    devices using thismethod resulted in an improvement in field-effect mobility and
    a reduction in hysteretic behavior. The prolonged treatment led to heavy p-doping,
    possibly owing to substitutional F doping.The treatment strengthwas controllable
    by the treatment time and sample position during the treatment. Placing the samples
    upstreamresulted in amilder treatment compared to that positioned downstream.
    The controllability of the proposed method enables us to fine-tune the properties
    of devices based on 2Dmaterials.The treatment elements could be controlled using
    sheetsmade of materials other than PTFE, indicating the broad applicability of
    this method.
  description_type: abstract
  lang: und

## Creator

- name: Hiroki Kii
  role: author
- name: Naoka Nagamura
  role: author
  orcid: https://orcid.org/0000-0002-7697-8983
- name: Ryo Nouchi
  role: author
  orcid: https://orcid.org/0000-0002-7232-4827

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: transition-metal dichalcogenide
  schema: not_defined
- subject: surface passivation
  schema: not_defined
- subject: hysteresis
  schema: not_defined
- subject: water repellency
  schema: not_defined
- subject: substitutional doping
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nano Express
  issn: 2632959X
  volume: '6'
  issue: '2'
  article_number: '025008'

## Conference



## Related item



## Funding

- funder_name: Murata Science and Education Foundation
- identifier: JP19H02561, JP22H01912, JP23K23180, JP21H01638, JP21H04696, JP24K01243
  funder_name: Japan Society for the Promotion of Science
  description: KAKENHI
- identifier: JPMJPR20T8, JPMJPR20T7, JPMJPR17NB
  funder_name: Japan Science and Technology Agency
  description: Precursory Research for Embryonic Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: d0bb450a-22b2-4b9c-8379-fb43d4ae49d2
  filename: Kii_2025_Nano_Ex._6_025008.pdf
  content_type: application/pdf
  size: 1078743
  md5: d92f54de7e18ed69328c3fa64ff927ba

## Thumbnail

fileset_id: d0bb450a-22b2-4b9c-8379-fb43d4ae49d2
filename: Kii_2025_Nano_Ex._6_025008.pdf