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Plasma treatment using a solid-state fluorine (F) source canmitigate the emission of F-containing gases into the environment. In this study,we investigated the processability of Ar-plasma-mediated F treatment using a polytetrafluoroethylene (PTFE) sheet as the F source. Surface treatment of two-dimensional (2D) semiconductor devices using thismethod resulted in an improvement in field-effect mobility and a reduction in hysteretic behavior. The prolonged treatment led to heavy p-doping, possibly owing to substitutional F doping.The treatment strengthwas controllable by the treatment time and sample position during the treatment. Placing the samples upstreamresulted in amilder treatment compared to that positioned downstream. The controllability of the proposed method enables us to fine-tune the properties of devices based on 2Dmaterials.The treatment elements could be controlled using sheetsmade of materials other than PTFE, indicating the broad applicability of this method.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: transition-metal dichalcogenide, surface passivation, hysteresis, water repellency, substitutional doping

刊行年月日: 2025-06-30

出版者: IOP Publishing

掲載誌:

• Nano Express (ISSN: 2632959X) vol. 6 issue. 2 025008

研究助成金:

• Murata Science and Education Foundation
• Japan Society for the Promotion of Science JP19H02561, JP22H01912, JP23K23180, JP21H01638, JP21H04696, JP24K01243 (KAKENHI)
• Japan Science and Technology Agency JPMJPR20T8, JPMJPR20T7, JPMJPR17NB (Precursory Research for Embryonic Science and Technology)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2632-959x/addadb

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更新時刻: 2026-01-20 09:55:23 +0900

MDRでの公開時刻: 2026-01-20 12:23:01 +0900